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CS4N70ARHD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: CS4N70ARHD

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 70 W

Предельно допустимое напряжение сток-исток (Uds): 700 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 4 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 15 nC

Время нарастания (tr): 17 ns

Выходная емкость (Cd): 50 pf

Сопротивление сток-исток открытого транзистора (Rds): 2.8 Ohm

Тип корпуса: TO-262

Аналог (замена) для CS4N70ARHD

 

CS4N70ARHD Datasheet (PDF)

1.1. cs4n70arhd.pdf Size:930K _update_mosfet

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70 ARHD General Description: VDSS 700 V CS4N70 ARHD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

4.1. cs4n70fa9d.pdf Size:930K _update_mosfet

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70F A9D General Description: VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

4.2. cs4n70 arhd.pdf Size:930K _crhj

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70 ARHD General Description: VDSS 700 V CS4N70 ARHD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 4.3. cs4n70 a4hd.pdf Size:428K _crhj

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70 A4HD General Description: VDSS 700 V CS4N70 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

4.4. cs4n70 a3d.pdf Size:427K _crhj

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70 A3D General Description: VDSS 700 V CS4N70 A3D, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 4.5. cs4n70f a9d.pdf Size:930K _crhj

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70F A9D General Description: VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

4.6. cs4n70 a3hd-g.pdf Size:432K _crhj

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70 A3HD-G General Description: VDSS 700 V CS4N70 A3HD-G, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Другие MOSFET... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 

 
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