CS50N80 Todos los transistores

 

CS50N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS50N80
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.098 Ohm
   Paquete / Cubierta: TO-258A

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CS50N80 Datasheet (PDF)

 ..1. Size:72K  china
cs50n80.pdf

CS50N80

LJ2015-05CS50N80 N ( P 125 WDI V =20VT =25 50 AD GS CI 100 ADMV 20 VGST 150 jmT -55 150 stgBV V =0VI =0.1mA 800 VDSS GS DV =800VV =0V 100DS GSI ADSSV =800VV =0V

 9.1. Size:1386K  jilin sino
jcs50n20wt jcs50n20abt.pdf

CS50N80
CS50N80

R JCS50N20T JCS50N20T Package MAIN CHARACTERISTICS ID 50A VDSS 200 V Rdson-max 50m @Vgs=10V Qg-typ 90nC APPLICATIONS High frequency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEATURES

 9.2. Size:1911K  jilin sino
jcs50n06vh jcs50n06rh jcs50n06ch jcs50n06fh.pdf

CS50N80
CS50N80

N RN-CHANNEL MOSFET JCS50N06H Package MAIN CHARACTERISTICS ID 50 A VDSS 60 V Rdson-max 23 m @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switch UPS mode power supplies UPS FEATURES Low gate charge

 9.3. Size:932K  blue-rocket-elect
brcs50n06bd.pdf

CS50N80
CS50N80

BRCS50N06BD Rev.A Sep.-2022 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications

 9.4. Size:906K  blue-rocket-elect
brcs50n06ra.pdf

CS50N80
CS50N80

BRCS50N06RA Rev.A Sep.-2020 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies. Halogen-free Product. / Applications

 9.5. Size:837K  blue-rocket-elect
brcs50n06dp.pdf

CS50N80
CS50N80

BRCS50N06DP Rev.B Aug.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications

 9.6. Size:861K  blue-rocket-elect
brcs50n06ip.pdf

CS50N80
CS50N80

BRCS50N06IP Rev.A Jun.-2022 DATA SHEET / Descriptions TO-251 N N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies, HF Product. / Applications

 9.7. Size:418K  crhj
cs50n20 anh.pdf

CS50N80
CS50N80

Silicon N-Channel Power MOSFET R CS50N20 ANH General Description VDSS 200 V CS50N20 ANH, the silicon N-channel Enhanced ID 50 A PD (TC=25) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.045 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 9.8. Size:249K  foshan
cs50n06.pdf

CS50N80
CS50N80

BR50N06(CS50N06) N-CHANNEL MOSFET/N MOS :DC/DC Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :R C

 9.9. Size:253K  lzg
cs50n06d.pdf

CS50N80
CS50N80

BRD50N06(CS50N06D) N-CHANNEL MOSFET/N MOS :DC/DC Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :R C

 9.10. Size:499K  convert
cs50n06f cs50n06p cs50n06u cs50n06d.pdf

CS50N80
CS50N80

nvertSuzhou Convert Semiconductor Co ., Ltd.CS50N06F,CS50N06P,CS50N06U,CS50N06D60V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS50N06F TO-

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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