LJ2015-05CS50N80 N ( P 125 WDI V =20VT =25 50 AD GS CI 100 ADMV 20 VGST 150 jmT -55 150 stgBV V =0VI =0.1mA 800 VDSS GS DV =800VV =0V 100DS GSI ADSSV =800VV =0V

R JCS50N20T JCS50N20T Package MAIN CHARACTERISTICS ID 50A VDSS 200 V Rdson-max 50m @Vgs=10V Qg-typ 90nC APPLICATIONS High frequency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEATURES

N RN-CHANNEL MOSFET JCS50N06H Package MAIN CHARACTERISTICS ID 50 A VDSS 60 V Rdson-max 23 m @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switch UPS mode power supplies UPS FEATURES Low gate charge

BRCS50N06BD Rev.A Sep.-2022 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications

BRCS50N06RA Rev.A Sep.-2020 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies. Halogen-free Product. / Applications

BRCS50N06DP Rev.B Aug.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications

BRCS50N06IP Rev.A Jun.-2022 DATA SHEET / Descriptions TO-251 N N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies, HF Product. / Applications

Silicon N-Channel Power MOSFET R CS50N20 ANH General Description VDSS 200 V CS50N20 ANH, the silicon N-channel Enhanced ID 50 A PD (TC=25) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.045 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

BR50N06(CS50N06) N-CHANNEL MOSFET/N MOS :DC/DC Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :R C

BRD50N06(CS50N06D) N-CHANNEL MOSFET/N MOS :DC/DC Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :R C

nvertSuzhou Convert Semiconductor Co ., Ltd.CS50N06F,CS50N06P,CS50N06U,CS50N06D60V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS50N06F TO-