CS540N Todos los transistores

 ..1. Size:122K  china
 cs540n.pdf

CS540N N PD TC=25 130 W 0.87 W/ ID VGS=10V,TC=25 33 A ID VGS=10V,TC=100 23 A IDM 110 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.15 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=16A 0.044

 9.1. Size:1692K  jilin sino
 jcs540bt jcs540st jcs540ct jcs540ft jcs540wt.pdf

 9.2. Size:534K  crhj
 cs540 a4.pdf

Silicon N-Channel Power MOSFET R CS540 A4 General Description VDSS 100 V CS540 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 33 A PD(TC=25 ) 150 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 30 m conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 9.3. Size:523K  crhj
 cs540 ar.pdf

Silicon N-Channel Power MOSFET R CS540 AR General Description VDSS 100 V CS540 AR, the silicon N-channel Enhanced ID 33 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 30 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 9.4. Size:837K  crhj
 cs540 b8.pdf

Silicon N-Channel Power MOSFET R CS540 B8 General Description VDSS 100 V CS540 B8, the silicon N-channel Enhanced VDMOSFETs, is ID 33 A PD(TC=25 ) 150 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 43 m conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 9.5. Size:527K  crhj
 cs540 a8.pdf

Silicon N-Channel Power MOSFET R CS540 A8 General Description VDSS 100 V CS540 A8, the silicon N-channel Enhanced ID 33 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 30 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 9.6. Size:538K  crhj
 cs540 a3.pdf

Silicon N-Channel Power MOSFET R CS540 A3 General Description VDSS 100 V CS540 A3, the silicon N-channel Enhanced VDMOSFETs, ID 33 A PD(TC=25 ) 150 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 30 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 9.7. Size:125K  china
 cs540.pdf

CS540 N PD TC=25 100 W 0.8 W/ ID VGS=10V,TC=25 28 A ID VGS=10V,TC=100 16 A IDM 92 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.25 /W BVDSS VGS=0V,ID=0.25mA 100 V VGS=10V,ID=17A 0.049 0.077 RD

 9.8. Size:837K  wuxi china
 cs540b8.pdf

Silicon N-Channel Power MOSFET R CS540 B8 General Description VDSS 100 V CS540 B8, the silicon N-channel Enhanced VDMOSFETs, is ID 33 A PD(TC=25 ) 150 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 43 m conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 9.9. Size:1082K  wuxi china
 cs540a8.pdf

Silicon N-Channel Power MOSFET R CS540 A8 General Description VDSS 100 V CS540 A8, the silicon N-channel Enhanced ID 33 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 30 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit