CS540N - параметры транзистора MOSFET, его аналоги, datasheet

CS540N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: CS540N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 33 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.044 Ohm
   Тип корпуса: TO-257

Аналог (замена) для CS540N

CS540N Datasheet (PDF)

..1. Size:122K china
cs540n.pdf

CS540N N PD TC=25 130 W 0.87 W/ ID VGS=10V,TC=25 33 A ID VGS=10V,TC=100 23 A IDM 110 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.15 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=16A 0.044

9.1. Size:1692K jilin sino
jcs540bt jcs540st jcs540ct jcs540ft jcs540wt.pdf

N RN-CHANNEL MOSFET JCS540T Package MAIN CHARACTERISTICS ID 33 A VDSS 100 V Rdson-max 44 m @Vgs=10V Qg-typ 37.0 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

9.2. Size:534K crhj
cs540 a4.pdf

Silicon N-Channel Power MOSFET R CS540 A4 General Description VDSS 100 V CS540 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 33 A PD(TC=25) 150 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 30 m conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

9.3. Size:523K crhj
cs540 ar.pdf

Silicon N-Channel Power MOSFET R CS540 AR General Description VDSS 100 V CS540 AR, the silicon N-channel Enhanced ID 33 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 30 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

9.4. Size:837K crhj
cs540 b8.pdf

Silicon N-Channel Power MOSFET R CS540 B8 General Description VDSS 100 V CS540 B8, the silicon N-channel Enhanced VDMOSFETs, is ID 33 A PD(TC=25) 150 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 43 m conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

9.5. Size:527K crhj
cs540 a8.pdf

Silicon N-Channel Power MOSFET R CS540 A8 General Description VDSS 100 V CS540 A8, the silicon N-channel Enhanced ID 33 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 30 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

9.6. Size:538K crhj
cs540 a3.pdf

Silicon N-Channel Power MOSFET R CS540 A3 General Description VDSS 100 V CS540 A3, the silicon N-channel Enhanced VDMOSFETs, ID 33 A PD(TC=25) 150 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 30 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

9.7. Size:125K china
cs540.pdf

CS540 N PD TC=25 100 W 0.8 W/ ID VGS=10V,TC=25 28 A ID VGS=10V,TC=100 16 A IDM 92 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.25 /W BVDSS VGS=0V,ID=0.25mA 100 V VGS=10V,ID=17A 0.049 0.077 RD

9.8. Size:837K wuxi china
cs540b8.pdf