CS5N65A8H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS5N65A8H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15.5 nS
Cossⓘ - Capacitancia de salida: 71 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
Paquete / Cubierta: TO-220AB
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CS5N65A8H Datasheet (PDF)
cs5n65a8h.pdf
Silicon N-Channel Power MOSFET R CS5N65 A8H General Description VDSS 650 V CS5N65 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs5n65a7h.pdf
Silicon N-Channel Power MOSFET R CS5N65 A7H General Description VDSS 650 V CS5N65 A7H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs5n65a4.pdf
Silicon N-Channel Power MOSFET R CS5N65 A4 General Description VDSS 650 V CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs5n65a3.pdf
Silicon N-Channel Power MOSFET R CS5N65 A3 General Description VDSS 650 V CS5N65 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
Otros transistores... CS5M5210 , CS5N50 , CS5N5210 , CS5N60D , CS5N60F , CS5N65A3 , CS5N65A4 , CS5N65A7H , 2SK3878 , CS5N65FA9H , CS5N70A4 , CS5N70FA9 , CS5N90 , CS5N90ARH-G , CS5N90FA9H , CS5NB90 , CS5NJ5305 .
History: SWF4N80K | NP90N04PDH | SWF4N70D1 | HFS4N60F | 2SK990 | OSG60R1K8PF | SQ2303ES
History: SWF4N80K | NP90N04PDH | SWF4N70D1 | HFS4N60F | 2SK990 | OSG60R1K8PF | SQ2303ES
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