CS5N65A8H Specs and Replacement

Type Designator: CS5N65A8H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.5 nS

Cossⓘ - Output Capacitance: 71 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm

Package: TO-220AB

CS5N65A8H substitution

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CS5N65A8H datasheet

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CS5N65A8H

Silicon N-Channel Power MOSFET R CS5N65 A8H General Description VDSS 650 V CS5N65 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 7.1. Size:417K  wuxi china
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CS5N65A8H

Silicon N-Channel Power MOSFET R CS5N65 A7H General Description VDSS 650 V CS5N65 A7H, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

 7.2. Size:837K  wuxi china
 cs5n65a4.pdf pdf_icon

CS5N65A8H

Silicon N-Channel Power MOSFET R CS5N65 A4 General Description VDSS 650 V CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

 7.3. Size:837K  wuxi china
 cs5n65a3.pdf pdf_icon

CS5N65A8H

Silicon N-Channel Power MOSFET R CS5N65 A3 General Description VDSS 650 V CS5N65 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit... See More ⇒

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Detailed specifications: CS5M5210, CS5N50, CS5N5210, CS5N60D, CS5N60F, CS5N65A3, CS5N65A4, CS5N65A7H, 2SK3878, CS5N65FA9H, CS5N70A4, CS5N70FA9, CS5N90, CS5N90ARH-G, CS5N90FA9H, CS5NB90, CS5NJ5305

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