CS640FA9H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS640FA9H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 55 W
   Voltaje máximo drenador - fuente |Vds|: 200 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 18 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 24 nC
   Tiempo de subida (tr): 33 nS
   Conductancia de drenaje-sustrato (Cd): 180 pF
   Resistencia entre drenaje y fuente RDS(on): 0.18 Ohm
   Paquete / Cubierta: TO-220F

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CS640FA9H Datasheet (PDF)

..1. Size:828K wuxi china
cs640fa9h.pdf

Silicon N-Channel Power MOSFET R CS640F A9H General Description VDSS 200 V CS640F A9H, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25) 55 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

8.1. Size:1439K jilin sino
jcs640s jcs640c jcs640f.pdf

N N- CHANNEL MOSFET R JCS640 MAIN CHARACTERISTICS Package ID 18.0A VDSS 200 V Rdson-max 0.18 @Vgs=10V Qg-typ 47nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

8.2. Size:1405K jilin sino
jcs640vh jcs640rh jcs640ch jcs640fh.pdf

N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

8.3. Size:1803K jilin sino
jcs640vh jcs640rh jcs640ch jcs640fh jcs640sh.pdf

8.4. Size:708K crhj
cs640f a9h.pdf

Silicon N-Channel Power MOSFET R CS640F A9H General Description VDSS 200 V CS640F A9H, the silicon N-channel Enhanced ID 18 A PD(TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

8.5. Size:197K lzg
cs640f.pdf

IRFS640(CS640F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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