CS6N60A4TY MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS6N60A4TY

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 85 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm

Encapsulados: TO-252

 Búsqueda de reemplazo de CS6N60A4TY MOSFET

- Selecciónⓘ de transistores por parámetros

 

CS6N60A4TY datasheet

 ..1. Size:422K  wuxi china
 cs6n60a4ty.pdf pdf_icon

CS6N60A4TY

Silicon N-Channel Power MOSFET R CS6N60 A4TY General Description VDSS 600 V CS6N60 A4TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 6.1. Size:351K  wuxi china
 cs6n60a4d.pdf pdf_icon

CS6N60A4TY

Silicon N-Channel Power MOSFET R CS6N60 A4D General Description VDSS 600 V CS6N60 A4D, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:319K  wuxi china
 cs6n60a3ty.pdf pdf_icon

CS6N60A4TY

Silicon N-Channel Power MOSFET R CS6N60 A3TY General Description VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.2. Size:231K  wuxi china
 cs6n60a3d.pdf pdf_icon

CS6N60A4TY

Silicon N-Channel Power MOSFET R CS6N60 A3D General Description VDSS 600 V CS6N60 A3D, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

MOSTRAR MÁS

Otros transistores... CS6769, CS6790, CS6796, CS6798, CS6849, CS6849U, CS6N60A3TY, CS6N60A4D, AO3400A, CS6N60F, CS6N60FA9TY, CS6N70A3D-G, CS6N70A4D-G, CS6N70FA9D, CS6N70FB9D, CS6N80A8, CS6N80ARH