Справочник MOSFET. CS6N60A4TY

 

CS6N60A4TY Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS6N60A4TY
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.7 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для CS6N60A4TY

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS6N60A4TY Datasheet (PDF)

 ..1. Size:422K  wuxi china
cs6n60a4ty.pdfpdf_icon

CS6N60A4TY

Silicon N-Channel Power MOSFET R CS6N60 A4TY General Description VDSS 600 V CS6N60 A4TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 6.1. Size:351K  wuxi china
cs6n60a4d.pdfpdf_icon

CS6N60A4TY

Silicon N-Channel Power MOSFET R CS6N60 A4D General Description VDSS 600 V CS6N60 A4D, the silicon N-channel Enhanced ID 6 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:319K  wuxi china
cs6n60a3ty.pdfpdf_icon

CS6N60A4TY

Silicon N-Channel Power MOSFET R CS6N60 A3TY General Description VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.2. Size:231K  wuxi china
cs6n60a3d.pdfpdf_icon

CS6N60A4TY

Silicon N-Channel Power MOSFET R CS6N60 A3D General Description VDSS 600 V CS6N60 A3D, the silicon N-channel Enhanced ID 6 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

Другие MOSFET... CS6769 , CS6790 , CS6796 , CS6798 , CS6849 , CS6849U , CS6N60A3TY , CS6N60A4D , RU6888R , CS6N60F , CS6N60FA9TY , CS6N70A3D-G , CS6N70A4D-G , CS6N70FA9D , CS6N70FB9D , CS6N80A8 , CS6N80ARH .

History: KP775V | IPB80N04S4-04 | STP10NM60ND | HGA025N06S | 30N20 | SM4025PSU | AP2328GN

 

 
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