NDS8926 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDS8926  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SO8

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NDS8926 datasheet

 9.1. Size:198K  fairchild semi
 nds8936.pdf pdf_icon

NDS8926

June 1997 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5.3A, 30V. RDS(ON) = 0.035 @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = 4.5V. density, DMOS technology. This very high density process is especially tailored to minimize

 9.2. Size:222K  fairchild semi
 nds8958.pdf pdf_icon

NDS8926

July 1996 NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field N-Channel 5.3A, 30V, RDS(ON)=0.035 @ VGS=10V. effect transistors are produced using Fairchild's proprietary, P-Channel -4.0A, -30V, RDS(ON)=0.065 @ VGS=-10V. high cell density, DMOS technology. This very high density

 9.3. Size:82K  fairchild semi
 nds8934.pdf pdf_icon

NDS8926

March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -3.8A, -20V. RDS(ON) = 0.07 @ VGS = -4.5V transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -2.7V. high cell density, DMOS technology. This very high High density cell design for extremely low RDS

 9.4. Size:199K  fairchild semi
 nds8947.pdf pdf_icon

NDS8926

March 1996 NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -4A, -30V. RDS(ON) = 0.065 @ VGS = -10V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.1 @ VGS = -4.5V. density, DMOS technology. This very high density process is especially tailored to minimi

MOSTRAR MÁS

Otros transistores... NDS355AN, NDS356AP, NDS7002A, NDS8410A, NDS8425, NDS8426A, NDS8434A, NDS8435A, 60N06, NDS8934, NDS8936, NDS8961, NDS9400A, NDS9407, NDS9410A, NDS9435A, NDS9925A