NDS8926 Datasheet and Replacement. Cross Reference Search

NDS8926 Datasheet (PDF)

9.1. Size:198K fairchild semi
nds8936.pdf pdf_icon

June 1997 NDS8936Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.3A, 30V. RDS(ON) = 0.035 @ VGS = 10Vtransistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = 4.5V.density, DMOS technology. This very high density process isespecially tailored to minimize

9.2. Size:222K fairchild semi
nds8958.pdf pdf_icon

July 1996 NDS8958Dual N & P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese dual N- and P-Channel enhancement mode power fieldN-Channel 5.3A, 30V, RDS(ON)=0.035 @ VGS=10V.effect transistors are produced using Fairchild's proprietary,P-Channel -4.0A, -30V, RDS(ON)=0.065 @ VGS=-10V. high cell density, DMOS technology. This very high density

9.3. Size:82K fairchild semi
nds8934.pdf pdf_icon

March 1996 NDS8934Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect-3.8A, -20V. RDS(ON) = 0.07 @ VGS = -4.5Vtransistors are produced using Fairchild's proprietary,RDS(ON) = 0.1 @ VGS = -2.7V.high cell density, DMOS technology. This very highHigh density cell design for extremely low RDS

9.4. Size:199K fairchild semi
nds8947.pdf pdf_icon

March 1996 NDS8947Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4A, -30V. RDS(ON) = 0.065 @ VGS = -10Vtransistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.1 @ VGS = -4.5V.density, DMOS technology. This very high density process isespecially tailored to minimi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .