NDS8926 Datasheet. Specs and Replacement

Type Designator: NDS8926  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SO8

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NDS8926 datasheet

 9.1. Size:198K  fairchild semi
 nds8936.pdf pdf_icon

NDS8926

June 1997 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5.3A, 30V. RDS(ON) = 0.035 @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = 4.5V. density, DMOS technology. This very high density process is especially tailored to minimize... See More ⇒

 9.2. Size:222K  fairchild semi
 nds8958.pdf pdf_icon

NDS8926

July 1996 NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field N-Channel 5.3A, 30V, RDS(ON)=0.035 @ VGS=10V. effect transistors are produced using Fairchild's proprietary, P-Channel -4.0A, -30V, RDS(ON)=0.065 @ VGS=-10V. high cell density, DMOS technology. This very high density... See More ⇒

 9.3. Size:82K  fairchild semi
 nds8934.pdf pdf_icon

NDS8926

March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -3.8A, -20V. RDS(ON) = 0.07 @ VGS = -4.5V transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -2.7V. high cell density, DMOS technology. This very high High density cell design for extremely low RDS... See More ⇒

 9.4. Size:199K  fairchild semi
 nds8947.pdf pdf_icon

NDS8926

March 1996 NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -4A, -30V. RDS(ON) = 0.065 @ VGS = -10V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.1 @ VGS = -4.5V. density, DMOS technology. This very high density process is especially tailored to minimi... See More ⇒

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Detailed specifications: NDS355AN, NDS356AP, NDS7002A, NDS8410A, NDS8425, NDS8426A, NDS8434A, NDS8435A, 60N06, NDS8934, NDS8936, NDS8961, NDS9400A, NDS9407, NDS9410A, NDS9435A, NDS9925A

Keywords - NDS8926 MOSFET specs

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