CS6N90ARH-G Todos los transistores

 

CS6N90ARH-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS6N90ARH-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 111 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
   Paquete / Cubierta: TO-262
 

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CS6N90ARH-G Datasheet (PDF)

 ..1. Size:609K  wuxi china
 cs6n90arh-g.pdf pdf_icon

CS6N90ARH-G

Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 8.1. Size:1185K  jilin sino
 jcs6n90fa jcs6n90ba jcs6n90sa jcs6n90ca jcs6n90gda.pdf pdf_icon

CS6N90ARH-G

N RN-CHANNEL MOSFET JCS6N90A MAIN CHARACTERISTICS Package ID 6.0 A VDSS 900 V RdsonVgs=10V 3.0 -MAX Qg-Typ 24.0nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power suppli

 8.2. Size:1374K  jilin sino
 jcs6n90ch jcs6n90fh jcs6n90b.pdf pdf_icon

CS6N90ARH-G

N RN-CHANNEL MOSFET JCS6N90H Package MAIN CHARACTERISTICS ID 6 A VDSS 900 V Rdson-max 3.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

 8.3. Size:424K  crhj
 cs6n90f a9h.pdf pdf_icon

CS6N90ARH-G

Silicon N-Channel Power MOSFET R CS6N90F A9H General Description VDSS 900 V CS6N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 48 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.85 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

MOSTRAR MÁS

Otros transistores... CS6N60FA9TY , CS6N70A3D-G , CS6N70A4D-G , CS6N70FA9D , CS6N70FB9D , CS6N80A8 , CS6N80ARH , CS6N80FA9 , 8N60 , CS6N90FA9H , CS7000 , CS7002 , CS7002K , CS7218 , CS7225 , CS7233 , CS7236 .

History: AM1440N | CS7N65A3TDY | MTP2311N3 | QM3001D | HM8N20I

 

 
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