NDS8934 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NDS8934
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET NDS8934

NDS8934 Datasheet (PDF)

..1. Size:82K fairchild semi
nds8934.pdf

March 1996 NDS8934Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect-3.8A, -20V. RDS(ON) = 0.07 @ VGS = -4.5Vtransistors are produced using Fairchild's proprietary,RDS(ON) = 0.1 @ VGS = -2.7V.high cell density, DMOS technology. This very highHigh density cell design for extremely low RDS

8.1. Size:198K fairchild semi
nds8936.pdf

June 1997 NDS8936Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.3A, 30V. RDS(ON) = 0.035 @ VGS = 10Vtransistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = 4.5V.density, DMOS technology. This very high density process isespecially tailored to minimize

9.1. Size:222K fairchild semi
nds8958.pdf

July 1996 NDS8958Dual N & P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese dual N- and P-Channel enhancement mode power fieldN-Channel 5.3A, 30V, RDS(ON)=0.035 @ VGS=10V.effect transistors are produced using Fairchild's proprietary,P-Channel -4.0A, -30V, RDS(ON)=0.065 @ VGS=-10V. high cell density, DMOS technology. This very high density

9.2. Size:199K fairchild semi
nds8947.pdf

March 1996 NDS8947Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4A, -30V. RDS(ON) = 0.065 @ VGS = -10Vtransistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.1 @ VGS = -4.5V.density, DMOS technology. This very high density process isespecially tailored to minimi

Otros transistores... NDS356AP , NDS7002A , NDS8410A , NDS8425 , NDS8426A , NDS8434A , NDS8435A , NDS8926 , AO3401 , NDS8936 , NDS8961 , NDS9400A , NDS9407 , NDS9410A , NDS9435A , NDS9925A , NDS9933A .

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