NDS8934 datasheet, аналоги, основные параметры

Наименование производителя: NDS8934  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm

Тип корпуса: SO8

  📄📄 Копировать 

Аналог (замена) для NDS8934

- подборⓘ MOSFET транзистора по параметрам

 

NDS8934 даташит

 ..1. Size:82K  fairchild semi
 nds8934.pdf pdf_icon

NDS8934

March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -3.8A, -20V. RDS(ON) = 0.07 @ VGS = -4.5V transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -2.7V. high cell density, DMOS technology. This very high High density cell design for extremely low RDS

 8.1. Size:198K  fairchild semi
 nds8936.pdf pdf_icon

NDS8934

June 1997 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5.3A, 30V. RDS(ON) = 0.035 @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = 4.5V. density, DMOS technology. This very high density process is especially tailored to minimize

 9.1. Size:222K  fairchild semi
 nds8958.pdf pdf_icon

NDS8934

July 1996 NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field N-Channel 5.3A, 30V, RDS(ON)=0.035 @ VGS=10V. effect transistors are produced using Fairchild's proprietary, P-Channel -4.0A, -30V, RDS(ON)=0.065 @ VGS=-10V. high cell density, DMOS technology. This very high density

 9.2. Size:199K  fairchild semi
 nds8947.pdf pdf_icon

NDS8934

March 1996 NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -4A, -30V. RDS(ON) = 0.065 @ VGS = -10V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.1 @ VGS = -4.5V. density, DMOS technology. This very high density process is especially tailored to minimi

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NDS356AP, NDS7002A, NDS8410A, NDS8425, NDS8426A, NDS8434A, NDS8435A, NDS8926, IRFZ46N, NDS8936, NDS8961, NDS9400A, NDS9407, NDS9410A, NDS9435A, NDS9925A, NDS9933A