CS730F Todos los transistores

 ..1. Size:190K  crhj
 cs730f a9rd.pdf

Silicon N-Channel Power MOSFET R CS730F A9RD General Description VDSS 400 V ID 6 A CS730F A9RD, the silicon N-channel Enhanced PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 ..2. Size:222K  crhj
 cs730f a9h.pdf

Silicon N-Channel Power MOSFET R CS730F A9H General Description VDSS 400 V ID 6 A CS730F A9H, the silicon N-channel Enhanced PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 ..3. Size:227K  lzg
 cs730f.pdf

 0.1. Size:1785K  jilin sino
 jcs730vc jcs730rc jcs730sc jcs730bc jcs730cc jcs730fc.pdf

N R N-CHANNEL MOSFET JCS730C MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V Rdson-max 1.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High frequency switching mode power supply LED Electronic ballast LED power supply

 0.2. Size:811K  jilin sino
 jcs730v jcs730r jcs730b jcs730s jcs730c jcs730f.pdf

N R N-CHANNEL MOSFET JCS730 MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V 1.0 Rdson Vgs=10V Qg 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES

 9.1. Size:253K  crhj
 cs730 a8rd.pdf

Silicon N-Channel Power MOSFET R CS730 A8RD General Description VDSS 400 V ID 6 A CS730 A8RD, the silicon N-channel Enhanced PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.75 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 9.2. Size:260K  crhj
 cs730 a4rd.pdf

Silicon N-Channel Power MOSFET R CS730 A4RD General Description VDSS 400 V ID 6 A CS730 A4RD, the silicon N-channel Enhanced PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 9.3. Size:199K  crhj
 cs730 a3rd.pdf

Silicon N-Channel Power MOSFET R CS730 A3RD General Description VDSS 400 V ID 6 A CS730 A3RD, the silicon N-channel Enhanced PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 9.4. Size:222K  crhj
 cs730 a8h.pdf

Silicon N-Channel Power MOSFET R CS730 A8H General Description VDSS 400 V ID 6 A CS730 A8H, the silicon N-channel Enhanced PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.8 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 9.5. Size:259K  wuxi china
 cs730a4rd.pdf

Silicon N-Channel Power MOSFET R CS730 A4RD General Description VDSS 400 V ID 6 A CS730 A4RD, the silicon N-channel Enhanced PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 9.6. Size:252K  wuxi china
 cs730a8rd.pdf

Silicon N-Channel Power MOSFET R CS730 A8RD General Description VDSS 400 V ID 6 A CS730 A8RD, the silicon N-channel Enhanced PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.75 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 9.7. Size:224K  wuxi china
 cs730a3rd.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS730 A3RD General Description VDSS 400 V ID 6 A CS730 A3RD, the silicon N-channel Enhanced PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can