Справочник MOSFET. CS730F

 

CS730F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS730F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 38 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.95 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для CS730F

 

 

CS730F Datasheet (PDF)

 ..1. Size:190K  crhj
 cs730f a9rd.pdf

CS730F CS730F

Silicon N-Channel Power MOSFET R CS730F A9RD General Description VDSS 400 V ID 6 A CS730F A9RD, the silicon N-channel Enhanced PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 ..2. Size:222K  crhj
 cs730f a9h.pdf

CS730F CS730F

Silicon N-Channel Power MOSFET R CS730F A9H General Description VDSS 400 V ID 6 A CS730F A9H, the silicon N-channel Enhanced PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 ..3. Size:227K  lzg
 cs730f.pdf

CS730F CS730F

IRFS730(CS730F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

 0.1. Size:1785K  jilin sino
 jcs730vc jcs730rc jcs730sc jcs730bc jcs730cc jcs730fc.pdf

CS730F CS730F

N RN-CHANNEL MOSFET JCS730C MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V Rdson-max 1.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High frequency switching mode power supply LED Electronic ballast LED power supply

 0.2. Size:811K  jilin sino
 jcs730v jcs730r jcs730b jcs730s jcs730c jcs730f.pdf

CS730F CS730F

N RN-CHANNEL MOSFET JCS730 MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V 1.0 RdsonVgs=10V Qg 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES

 9.1. Size:253K  crhj
 cs730 a8rd.pdf

CS730F CS730F

Silicon N-Channel Power MOSFET R CS730 A8RD General Description VDSS 400 V ID 6 A CS730 A8RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.75 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 9.2. Size:260K  crhj
 cs730 a4rd.pdf

CS730F CS730F

Silicon N-Channel Power MOSFET R CS730 A4RD General Description VDSS 400 V ID 6 A CS730 A4RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 9.3. Size:199K  crhj
 cs730 a3rd.pdf

CS730F CS730F

Silicon N-Channel Power MOSFET R CS730 A3RD General Description VDSS 400 V ID 6 A CS730 A3RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 9.4. Size:222K  crhj
 cs730 a8h.pdf

CS730F CS730F

Silicon N-Channel Power MOSFET R CS730 A8H General Description VDSS 400 V ID 6 A CS730 A8H, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.8 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 9.5. Size:259K  wuxi china
 cs730a4rd.pdf

CS730F CS730F

Silicon N-Channel Power MOSFET R CS730 A4RD General Description VDSS 400 V ID 6 A CS730 A4RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 9.6. Size:252K  wuxi china
 cs730a8rd.pdf

CS730F CS730F

Silicon N-Channel Power MOSFET R CS730 A8RD General Description VDSS 400 V ID 6 A CS730 A8RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.75 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 9.7. Size:224K  wuxi china
 cs730a3rd.pdf

CS730F CS730F

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS730 A3RD General Description VDSS 400 V ID 6 A CS730 A3RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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