NDS8961 Todos los transistores

 

NDS8961 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDS8961
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SO8
 

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NDS8961 Datasheet (PDF)

 9.1. Size:198K  fairchild semi
 nds8936.pdf pdf_icon

NDS8961

June 1997 NDS8936Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.3A, 30V. RDS(ON) = 0.035 @ VGS = 10Vtransistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = 4.5V.density, DMOS technology. This very high density process isespecially tailored to minimize

 9.2. Size:222K  fairchild semi
 nds8958.pdf pdf_icon

NDS8961

July 1996 NDS8958Dual N & P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese dual N- and P-Channel enhancement mode power fieldN-Channel 5.3A, 30V, RDS(ON)=0.035 @ VGS=10V.effect transistors are produced using Fairchild's proprietary,P-Channel -4.0A, -30V, RDS(ON)=0.065 @ VGS=-10V. high cell density, DMOS technology. This very high density

 9.3. Size:82K  fairchild semi
 nds8934.pdf pdf_icon

NDS8961

March 1996 NDS8934Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect-3.8A, -20V. RDS(ON) = 0.07 @ VGS = -4.5Vtransistors are produced using Fairchild's proprietary,RDS(ON) = 0.1 @ VGS = -2.7V.high cell density, DMOS technology. This very highHigh density cell design for extremely low RDS

 9.4. Size:199K  fairchild semi
 nds8947.pdf pdf_icon

NDS8961

March 1996 NDS8947Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4A, -30V. RDS(ON) = 0.065 @ VGS = -10Vtransistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.1 @ VGS = -4.5V.density, DMOS technology. This very high density process isespecially tailored to minimi

MOSTRAR MÁS

Otros transistores... NDS8410A , NDS8425 , NDS8426A , NDS8434A , NDS8435A , NDS8926 , NDS8934 , NDS8936 , NCEP15T14 , NDS9400A , NDS9407 , NDS9410A , NDS9435A , NDS9925A , NDS9933A , NDS9936 , NDS9945 .

History: SSG4410N | SSG4492N

 

 
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