NDS9400A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NDS9400A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET NDS9400A

NDS9400A Datasheet (PDF)

..1. Size:197K fairchild semi
nds9400a.pdf

February 1996 NDS9400ASingle P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.4A, -30V. RDS(ON) = 0.13 @ VGS = -10V.transistors are produced using Fairchild's proprietary, high cellHigh density cell design for extremely low RDS(ON).density, DMOS technology. This very high density process ises

8.1. Size:52K fairchild semi
nds9405.pdf

February 1996 NNDS9405Single P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.3A, -20V. RDS(ON) = 0.10 @ VGS = -10Vtransistors are produced using National's proprietary, high cellHigh density cell design for extremely low RDS(ON)density, DMOS technology. This very high density process isHigh

8.2. Size:141K fairchild semi
nds9407.pdf

May 2002 NDS9407 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.0 A, 60 V. RDS(ON) = 150 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 240 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide range

8.3. Size:665K onsemi
nds9407.pdf

8.4. Size:918K cn vbsemi
nds9407.pdf

NDS9407www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 100 % Rg and UIS testedRDS(on) () at VGS = -10 V 0.050RDS(on) () at VGS = -4.5 V 0.060ID (A) per leg -8SSO-8S1 8 DGS D2 7S3 6 DG D4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETE

Otros transistores... NDS8425 , NDS8426A , NDS8434A , NDS8435A , NDS8926 , NDS8934 , NDS8936 , NDS8961 , CEP83A3 , NDS9407 , NDS9410A , NDS9435A , NDS9925A , NDS9933A , NDS9936 , NDS9945 , NDS9947 .

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