NDS9400A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDS9400A 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Encapsulados: SO8
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NDS9400A datasheet
nds9400a.pdf
February 1996 NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -3.4A, -30V. RDS(ON) = 0.13 @ VGS = -10V. transistors are produced using Fairchild's proprietary, high cell High density cell design for extremely low RDS(ON). density, DMOS technology. This very high density process is es
nds9405.pdf
February 1996 N NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -4.3A, -20V. RDS(ON) = 0.10 @ VGS = -10V transistors are produced using National's proprietary, high cell High density cell design for extremely low RDS(ON) density, DMOS technology. This very high density process is High
nds9407.pdf
May 2002 NDS9407 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.0 A, 60 V. RDS(ON) = 150 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 240 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide range
Otros transistores... NDS8425, NDS8426A, NDS8434A, NDS8435A, NDS8926, NDS8934, NDS8936, NDS8961, 7N60, NDS9407, NDS9410A, NDS9435A, NDS9925A, NDS9933A, NDS9936, NDS9945, NDS9947
Parámetros del MOSFET. Cómo se afectan entre sí.
History: NDS8426A | NDS9435A
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