NDS9400A
MOSFET. Datasheet pdf. Equivalent
Type Designator: NDS9400A
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8
V
|Id|ⓘ - Maximum Drain Current: 3.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 25
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13
Ohm
Package:
SO8
NDS9400A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDS9400A
Datasheet (PDF)
..1. Size:197K fairchild semi
nds9400a.pdf
February 1996 NDS9400ASingle P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.4A, -30V. RDS(ON) = 0.13 @ VGS = -10V.transistors are produced using Fairchild's proprietary, high cellHigh density cell design for extremely low RDS(ON).density, DMOS technology. This very high density process ises
8.1. Size:52K fairchild semi
nds9405.pdf
February 1996 NNDS9405Single P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.3A, -20V. RDS(ON) = 0.10 @ VGS = -10Vtransistors are produced using National's proprietary, high cellHigh density cell design for extremely low RDS(ON)density, DMOS technology. This very high density process isHigh
8.2. Size:141K fairchild semi
nds9407.pdf
May 2002 NDS9407 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.0 A, 60 V. RDS(ON) = 150 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 240 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide range
8.4. Size:918K cn vbsemi
nds9407.pdf
NDS9407www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 100 % Rg and UIS testedRDS(on) () at VGS = -10 V 0.050RDS(on) () at VGS = -4.5 V 0.060ID (A) per leg -8SSO-8S1 8 DGS D2 7S3 6 DG D4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETE
Datasheet: NDS8425
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