CS7N65A4TDY MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS7N65A4TDY

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 95 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 93 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO-252

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CS7N65A4TDY datasheet

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CS7N65A4TDY

Silicon N-Channel Power MOSFET R CS7N65 A4TDY General Description VDSS 650 V CS7N65 A4TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 6.1. Size:283K  wuxi china
 cs7n65a4r.pdf pdf_icon

CS7N65A4TDY

Silicon N-Channel Power MOSFET R CS7N65 A4R General Description VDSS 650 V CS7N65 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:760K  wuxi china
 cs7n65a0d.pdf pdf_icon

CS7N65A4TDY

Silicon N-Channel Power MOSFET R CS7N65 A0D General Description VDSS 650 V CS7N65 A0D, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.2. Size:644K  wuxi china
 cs7n65a3tdy.pdf pdf_icon

CS7N65A4TDY

Silicon N-Channel Power MOSFET R CS7N65 A3TDY General Description VDSS 650 V CS7N65 A3TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

MOSTRAR MÁS

Otros transistores... CS7N1404, CS7N60A7HD, CS7N60A8HD, CS7N60F, CS7N60FA9HD, CS7N60FA9HDY, CS7N65A0D, CS7N65A3TDY, 2N7000, CS7N65FA9TDY, CS7N70ARD, CS7N80A8, CS7N80F, CS7NJZ44V, CS7Y1905C, CS80N60P3, CS830