Справочник MOSFET. CS7N65A4TDY

 

CS7N65A4TDY Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS7N65A4TDY
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 95 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 93 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для CS7N65A4TDY

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS7N65A4TDY Datasheet (PDF)

 ..1. Size:759K  wuxi china
 cs7n65a4tdy.pdf pdf_icon

CS7N65A4TDY

Silicon N-Channel Power MOSFET R CS7N65 A4TDY General Description VDSS 650 V CS7N65 A4TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 6.1. Size:283K  wuxi china
 cs7n65a4r.pdf pdf_icon

CS7N65A4TDY

Silicon N-Channel Power MOSFET R CS7N65 A4R General Description VDSS 650 V CS7N65 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:760K  wuxi china
 cs7n65a0d.pdf pdf_icon

CS7N65A4TDY

Silicon N-Channel Power MOSFET R CS7N65 A0D General Description VDSS 650 V CS7N65 A0D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.2. Size:644K  wuxi china
 cs7n65a3tdy.pdf pdf_icon

CS7N65A4TDY

Silicon N-Channel Power MOSFET R CS7N65 A3TDY General Description VDSS 650 V CS7N65 A3TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

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Другие MOSFET... CS7N1404 , CS7N60A7HD , CS7N60A8HD , CS7N60F , CS7N60FA9HD , CS7N60FA9HDY , CS7N65A0D , CS7N65A3TDY , IRF9540 , CS7N65FA9TDY , CS7N70ARD , CS7N80A8 , CS7N80F , CS7NJZ44V , CS7Y1905C , CS80N60P3 , CS830 .

 

 
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