CS830 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Silicon N-Channel Power MOSFET R CS830 A3RD General Description VDSS 500 V CS830 A3RD, the silicon N-channel Enhanced ID 5 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS830 A4RD General Description VDSS 500 V CS830 A4RD, the silicon N-channel Enhanced ID 5 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS830 A8RD General Description VDSS 500 V CS830 A8RD, the silicon N-channel Enhanced ID 5 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

IRF830(CS830) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8303 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 15 m (typ.) High forward transfer admittance: |Yfs| = 18 S (typ.) Low leakage current:

TPCS8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8302 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage curr

Silicon N-Channel Power MOSFET R CS830F A9RD General Description VDSS 500 V CS830F A9RD, the silicon N-channel Enhanced ID 5 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

IRFS830(CS830F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

Silicon N-Channel Power MOSFET R CS830 A4RD General Description VDSS 500 V CS830 A4RD, the silicon N-channel Enhanced ID 5 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS830F A9RD General Description VDSS 500 V CS830F A9RD, the silicon N-channel Enhanced ID 5 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Silicon N-Channel Power MOSFET R CS830 A8RD General Description VDSS 500 V CS830 A8RD, the silicon N-channel Enhanced ID 5 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS830 A3RD General Description VDSS 500 V CS830 A3RD, the silicon N-channel Enhanced ID 5 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s