CS830 Todos los transistores

 ..1. Size:257K  crhj
 cs830 a3rd.pdf

Silicon N-Channel Power MOSFET R CS830 A3RD General Description VDSS 500 V CS830 A3RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 ..2. Size:254K  crhj
 cs830 a4rd.pdf

Silicon N-Channel Power MOSFET R CS830 A4RD General Description VDSS 500 V CS830 A4RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 ..3. Size:249K  crhj
 cs830 a8rd.pdf

Silicon N-Channel Power MOSFET R CS830 A8RD General Description VDSS 500 V CS830 A8RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 ..4. Size:254K  foshan
 cs830.pdf

IRF830(CS830) N-Channel MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 )

 0.1. Size:224K  toshiba
 tpcs8303.pdf

TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8303 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 15 m (typ.) High forward transfer admittance Yfs = 18 S (typ.) Low leakage current

 0.2. Size:193K  toshiba
 tpcs8302.pdf

TPCS8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8302 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 22 m (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage curr

 0.3. Size:248K  crhj
 cs830f a9rd.pdf

Silicon N-Channel Power MOSFET R CS830F A9RD General Description VDSS 500 V CS830F A9RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.4. Size:298K  lzg
 cs830f.pdf

 0.5. Size:254K  wuxi china
 cs830a4rd.pdf

Silicon N-Channel Power MOSFET R CS830 A4RD General Description VDSS 500 V CS830 A4RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.6. Size:247K  wuxi china
 cs830fa9rd.pdf

Silicon N-Channel Power MOSFET R CS830F A9RD General Description VDSS 500 V CS830F A9RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.7. Size:248K  wuxi china
 cs830a8rd.pdf

Silicon N-Channel Power MOSFET R CS830 A8RD General Description VDSS 500 V CS830 A8RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.8. Size:257K  wuxi china
 cs830a3rd.pdf

Silicon N-Channel Power MOSFET R CS830 A3RD General Description VDSS 500 V CS830 A3RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s