CS830 - параметры транзистора MOSFET, его аналоги, datasheet

CS830 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: CS830
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 87.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 85 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO-220

Аналог (замена) для CS830

CS830 Datasheet (PDF)

..1. Size:257K crhj
cs830 a3rd.pdf

Silicon N-Channel Power MOSFET R CS830 A3RD General Description VDSS 500 V CS830 A3RD, the silicon N-channel Enhanced ID 5 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

..2. Size:254K crhj
cs830 a4rd.pdf

Silicon N-Channel Power MOSFET R CS830 A4RD General Description VDSS 500 V CS830 A4RD, the silicon N-channel Enhanced ID 5 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

..3. Size:249K crhj
cs830 a8rd.pdf

Silicon N-Channel Power MOSFET R CS830 A8RD General Description VDSS 500 V CS830 A8RD, the silicon N-channel Enhanced ID 5 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

..4. Size:254K foshan
cs830.pdf

IRF830(CS830) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

0.1. Size:224K toshiba
tpcs8303.pdf

TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8303 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 15 m (typ.) High forward transfer admittance: |Yfs| = 18 S (typ.) Low leakage current:

0.2. Size:193K toshiba
tpcs8302.pdf

TPCS8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8302 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage curr

0.3. Size:248K crhj
cs830f a9rd.pdf

Silicon N-Channel Power MOSFET R CS830F A9RD General Description VDSS 500 V CS830F A9RD, the silicon N-channel Enhanced ID 5 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

0.4. Size:298K lzg
cs830f.pdf

IRFS830(CS830F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

0.5. Size:254K wuxi china
cs830a4rd.pdf