CS830A3RD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS830A3RD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 68 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: TO-251

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CS830A3RD datasheet

 ..1. Size:257K  wuxi china
 cs830a3rd.pdf pdf_icon

CS830A3RD

Silicon N-Channel Power MOSFET R CS830 A3RD General Description VDSS 500 V CS830 A3RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.1. Size:254K  wuxi china
 cs830a4rd.pdf pdf_icon

CS830A3RD

Silicon N-Channel Power MOSFET R CS830 A4RD General Description VDSS 500 V CS830 A4RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:248K  wuxi china
 cs830a8rd.pdf pdf_icon

CS830A3RD

Silicon N-Channel Power MOSFET R CS830 A8RD General Description VDSS 500 V CS830 A8RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 9.1. Size:224K  toshiba
 tpcs8303.pdf pdf_icon

CS830A3RD

TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8303 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 15 m (typ.) High forward transfer admittance Yfs = 18 S (typ.) Low leakage current

MOSTRAR MÁS

Otros transistores... CS7N65FA9TDY, CS7N70ARD, CS7N80A8, CS7N80F, CS7NJZ44V, CS7Y1905C, CS80N60P3, CS830, STP75NF75, CS830A4RD, CS830A8RD, CS830F, CS830FA9RD, CS840, CS840A8D, CS840A8H, CS840F