CS830A3RD Specs and Replacement

Type Designator: CS830A3RD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-251

CS830A3RD substitution

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CS830A3RD datasheet

 ..1. Size:257K  wuxi china
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CS830A3RD

Silicon N-Channel Power MOSFET R CS830 A3RD General Description VDSS 500 V CS830 A3RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 8.1. Size:254K  wuxi china
 cs830a4rd.pdf pdf_icon

CS830A3RD

Silicon N-Channel Power MOSFET R CS830 A4RD General Description VDSS 500 V CS830 A4RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

 8.2. Size:248K  wuxi china
 cs830a8rd.pdf pdf_icon

CS830A3RD

Silicon N-Channel Power MOSFET R CS830 A8RD General Description VDSS 500 V CS830 A8RD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 9.1. Size:224K  toshiba
 tpcs8303.pdf pdf_icon

CS830A3RD

TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8303 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 15 m (typ.) High forward transfer admittance Yfs = 18 S (typ.) Low leakage current ... See More ⇒

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Detailed specifications: CS7N65FA9TDY, CS7N70ARD, CS7N80A8, CS7N80F, CS7NJZ44V, CS7Y1905C, CS80N60P3, CS830, STP75NF75, CS830A4RD, CS830A8RD, CS830F, CS830FA9RD, CS840, CS840A8D, CS840A8H, CS840F

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.