NDS9410A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDS9410A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de NDS9410A MOSFET
NDS9410A Datasheet (PDF)
nds9410a.pdf

February 1996 NDS9410ASingle N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 30V. RDS(ON) = 0.028 @ VGS = 10V.transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.042 @ VGS = 4.5V.density, DMOS technology. This very high density process isHigh density cell design
nds9410a.pdf

NDS9410Awww.VBsemi.twN-Channel 650 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 3.8RoHS Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 15RuggednessQgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 6 Compliant to RoHS
nds9400a.pdf

February 1996 NDS9400ASingle P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.4A, -30V. RDS(ON) = 0.13 @ VGS = -10V.transistors are produced using Fairchild's proprietary, high cellHigh density cell design for extremely low RDS(ON).density, DMOS technology. This very high density process ises
nds9405.pdf

February 1996 NNDS9405Single P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.3A, -20V. RDS(ON) = 0.10 @ VGS = -10Vtransistors are produced using National's proprietary, high cellHigh density cell design for extremely low RDS(ON)density, DMOS technology. This very high density process isHigh
Otros transistores... NDS8434A , NDS8435A , NDS8926 , NDS8934 , NDS8936 , NDS8961 , NDS9400A , NDS9407 , STP65NF06 , NDS9435A , NDS9925A , NDS9933A , NDS9936 , NDS9945 , NDS9947 , NDS9948 , NDS9953A .
History: WMK26N60C4 | NTMFS4833NS | SMF4N60 | FQA7N60 | SWF12N60D | VBZMB18N50
History: WMK26N60C4 | NTMFS4833NS | SMF4N60 | FQA7N60 | SWF12N60D | VBZMB18N50



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