All MOSFET. NDS9410A Datasheet

 

NDS9410A MOSFET. Datasheet pdf. Equivalent

Type Designator: NDS9410A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 7.3 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: SO8

NDS9410A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDS9410A Datasheet (PDF)

1.1. nds9410a.pdf Size:77K _fairchild_semi

NDS9410A
NDS9410A

February 1996 NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 7.3A, 30V. RDS(ON) = 0.028Ω @ VGS = 10V. transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.042Ω @ VGS = 4.5V. density, DMOS technology. This very high density process is High density cell design

5.1. nds9407.pdf Size:141K _fairchild_semi

NDS9410A
NDS9410A

 May 2002 NDS9407    60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of • –3.0 A, –60 V. RDS(ON) = 150 mΩ @ VGS = –10 V Fairchild Semiconductor’s advanced PowerTrench RDS(ON) = 240 mΩ @ VGS = –4.5 V process. It has been optimized for power management applications requiring a wide range

5.2. nds9400a.pdf Size:197K _fairchild_semi

NDS9410A
NDS9410A

February 1996 NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -3.4A, -30V. RDS(ON) = 0.13Ω @ VGS = -10V. transistors are produced using Fairchild's proprietary, high cell High density cell design for extremely low RDS(ON). density, DMOS technology. This very high density process is es

 5.3. nds9430.pdf Size:139K _fairchild_semi

NDS9410A
NDS9410A

 May 2002 NDS9430    30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of • –5.3 A, –30 V RDS(ON) = 60 mΩ @ VGS = –10 V Fairchild Semiconductor’s advanced PowerTrench RDS(ON) =100 mΩ @ VGS = –4.5 V process. It has been optimized for power management applications requiring a wide range of

5.4. nds9435a.pdf Size:166K _fairchild_semi

NDS9410A
NDS9410A

 January 2002 NDS9435A    30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of • –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS = –10 V Fairchild Semiconductor’s advanced PowerTrench RDS(ON) = 80 mΩ @ VGS = –4.5 V process. It has been optimized for power management applications requiring a wide rang

Datasheet: NDS8434A , NDS8435A , NDS8926 , NDS8934 , NDS8936 , NDS8961 , NDS9400A , NDS9407 , IRFP260M , NDS9435A , NDS9925A , NDS9933A , NDS9936 , NDS9945 , NDS9947 , NDS9948 , NDS9953A .

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