CS8N25A8H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS8N25A8H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.47 Ohm

Encapsulados: TO-220AB

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CS8N25A8H datasheet

 ..1. Size:635K  wuxi china
 cs8n25a8h.pdf pdf_icon

CS8N25A8H

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.1. Size:637K  wuxi china
 cs8n25a4h.pdf pdf_icon

CS8N25A8H

Silicon N-Channel Power MOSFET R CS8N25 A4H General Description VDSS 250 V CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:613K  crhj
 cs8n25f a9.pdf pdf_icon

CS8N25A8H

Silicon N-Channel Power MOSFET R CS8N25F A9 General Description VDSS 250 V CS8N25F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:637K  crhj
 cs8n25 a8h.pdf pdf_icon

CS8N25A8H

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

MOSTRAR MÁS

Otros transistores... CS840, CS840A8D, CS840A8H, CS840F, CS840FA9D, CS840FA9H, CS8473, CS8N25A4H, AON7410, CS8N60A8H, CS8N60F, CS8N60FA9H, CS8N65A0H, CS8N65A8H, CS8N65FA9H, CS8N80FA9D, CS8N90FA9HD