CS8N25A8H Datasheet. Specs and Replacement

Type Designator: CS8N25A8H  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm

Package: TO-220AB

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CS8N25A8H datasheet

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CS8N25A8H

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

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CS8N25A8H

Silicon N-Channel Power MOSFET R CS8N25 A4H General Description VDSS 250 V CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

 8.1. Size:613K  crhj
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CS8N25A8H

Silicon N-Channel Power MOSFET R CS8N25F A9 General Description VDSS 250 V CS8N25F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

 8.2. Size:637K  crhj
 cs8n25 a8h.pdf pdf_icon

CS8N25A8H

Silicon N-Channel Power MOSFET R CS8N25 A8H General Description VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25 ) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

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Detailed specifications: CS840, CS840A8D, CS840A8H, CS840F, CS840FA9D, CS840FA9H, CS8473, CS8N25A4H, AON6380, CS8N60A8H, CS8N60F, CS8N60FA9H, CS8N65A0H, CS8N65A8H, CS8N65FA9H, CS8N80FA9D, CS8N90FA9HD

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