All MOSFET. CS8N25A8H Datasheet

 

CS8N25A8H MOSFET. Datasheet pdf. Equivalent

Type Designator: CS8N25A8H

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 0.47 Ohm

Package: TO-220AB

CS8N25A8H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS8N25A8H Datasheet (PDF)

1.1. cs8n25a8h.pdf Size:635K _update_mosfet

CS8N25A8H
CS8N25A8H

Silicon N-Channel Power MOSFET R ○ CS8N25 A8H General Description: VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25℃) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

3.1. cs8n25a4h.pdf Size:637K _update_mosfet

CS8N25A8H
CS8N25A8H

Silicon N-Channel Power MOSFET R ○ CS8N25 A4H General Description: VDSS 250 V CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25℃) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 4.1. cs8n25 a8h.pdf Size:637K _crhj

CS8N25A8H
CS8N25A8H

Silicon N-Channel Power MOSFET R ○ CS8N25 A8H General Description: VDSS 250 V CS8N25 A8H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25℃) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

4.2. cs8n25 a4h.pdf Size:639K _crhj

CS8N25A8H
CS8N25A8H

Silicon N-Channel Power MOSFET R ○ CS8N25 A4H General Description: VDSS 250 V CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25℃) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 4.3. cs8n25f a9.pdf Size:613K _crhj

CS8N25A8H
CS8N25A8H

Silicon N-Channel Power MOSFET R ○ CS8N25F A9 General Description: VDSS 250 V CS8N25F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 8 A PD(TC=25℃) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.4 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 
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