CS8N65A0H Todos los transistores

 

CS8N65A0H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS8N65A0H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 108 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
   Paquete / Cubierta: TO-263
 

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CS8N65A0H Datasheet (PDF)

 ..1. Size:355K  wuxi china
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CS8N65A0H

Silicon N-Channel Power MOSFET R CS8N65 A0H General Description VDSS 650 V CS8N65 A0H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:347K  wuxi china
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CS8N65A0H

Silicon N-Channel Power MOSFET R CS8N65 A8H General Description VDSS 650 V CS8N65 A8H, the silicon N-channel Enhanced ID 8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25) 110 W RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 8.1. Size:1248K  jilin sino
 jcs8n65v jcs8n65r jcs8n65c jcs8n65f jcs8n65s jcs8n65b.pdf pdf_icon

CS8N65A0H

N RN-CHANNEL MOSFET JCS8N65C MAIN CHARACTERISTICS Package 88888888 8ID .0 A VDSS 650 V Rdson-max1.35 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED

 8.2. Size:354K  crhj
 cs8n65f a9h.pdf pdf_icon

CS8N65A0H

Silicon N-Channel Power MOSFET R CS8N65F A9H General Description VDSS 650 V CS8N65F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSM3J15FS | 2N6782-SM | FK20SM-9

 

 
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