CS8N65A0H Specs and Replacement

Type Designator: CS8N65A0H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-263

CS8N65A0H substitution

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CS8N65A0H datasheet

 ..1. Size:355K  wuxi china
 cs8n65a0h.pdf pdf_icon

CS8N65A0H

Silicon N-Channel Power MOSFET R CS8N65 A0H General Description VDSS 650 V CS8N65 A0H, the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 7.1. Size:347K  wuxi china
 cs8n65a8h.pdf pdf_icon

CS8N65A0H

Silicon N-Channel Power MOSFET R CS8N65 A8H General Description VDSS 650 V CS8N65 A8H, the silicon N-channel Enhanced ID 8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25 ) 110 W RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi... See More ⇒

 8.1. Size:1248K  jilin sino
 jcs8n65v jcs8n65r jcs8n65c jcs8n65f jcs8n65s jcs8n65b.pdf pdf_icon

CS8N65A0H

N R N-CHANNEL MOSFET JCS8N65C MAIN CHARACTERISTICS Package 8 8 8 8 8 8 8 8 8 ID .0 A VDSS 650 V Rdson-max 1.35 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED ... See More ⇒

 8.2. Size:354K  crhj
 cs8n65f a9h.pdf pdf_icon

CS8N65A0H

Silicon N-Channel Power MOSFET R CS8N65F A9H General Description VDSS 650 V CS8N65F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

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Detailed specifications: CS840FA9D, CS840FA9H, CS8473, CS8N25A4H, CS8N25A8H, CS8N60A8H, CS8N60F, CS8N60FA9H, IRFB3607, CS8N65A8H, CS8N65FA9H, CS8N80FA9D, CS8N90FA9HD, CS90N03B4, CS90N20D, CS910TH, CS9140

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.