CS8N80FA9D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS8N80FA9D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 47 nC
   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 152 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm
   Paquete / Cubierta: TO-220F

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CS8N80FA9D Datasheet (PDF)

..1. Size:350K wuxi china
cs8n80fa9d.pdf

Silicon N-Channel Power MOSFET R CS8N80F A9D VDSS 800 V General Description ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

7.1. Size:232K crhj
cs8n80f a9h.pdf

Silicon N-Channel Power MOSFET R CS8N80F A9H VDSS 800 V General Description ID 8 A CS8N80F A9H, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

7.2. Size:350K crhj
cs8n80f a9d.pdf

8.1. Size:232K crhj
cs8n80 a8h.pdf

Silicon N-Channel Power MOSFET R CS8N80 A8H VDSS 800 V General Description ID 8 A CS8N80 A8H, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

8.2. Size:228K crhj
cs8n80 a8d.pdf

Silicon N-Channel Power MOSFET R CS8N80 A8D VDSS 800 V General Description ID 8 A CS8N80 A8D, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.0 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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