CS8N80FA9D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS8N80FA9D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 152 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm

Encapsulados: TO-220F

 Búsqueda de reemplazo de CS8N80FA9D MOSFET

- Selecciónⓘ de transistores por parámetros

 

CS8N80FA9D datasheet

 ..1. Size:350K  wuxi china
 cs8n80fa9d.pdf pdf_icon

CS8N80FA9D

Silicon N-Channel Power MOSFET R CS8N80F A9D VDSS 800 V General Description ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.1. Size:232K  crhj
 cs8n80f a9h.pdf pdf_icon

CS8N80FA9D

Silicon N-Channel Power MOSFET R CS8N80F A9H VDSS 800 V General Description ID 8 A CS8N80F A9H, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.2. Size:350K  crhj
 cs8n80f a9d.pdf pdf_icon

CS8N80FA9D

Silicon N-Channel Power MOSFET R CS8N80F A9D VDSS 800 V General Description ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.1. Size:232K  crhj
 cs8n80 a8h.pdf pdf_icon

CS8N80FA9D

Silicon N-Channel Power MOSFET R CS8N80 A8H VDSS 800 V General Description ID 8 A CS8N80 A8H, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

MOSTRAR MÁS

Otros transistores... CS8N25A4H, CS8N25A8H, CS8N60A8H, CS8N60F, CS8N60FA9H, CS8N65A0H, CS8N65A8H, CS8N65FA9H, CS150N03A8, CS8N90FA9HD, CS90N03B4, CS90N20D, CS910TH, CS9140, CS9530, CS9532, CS9540