CS8N80FA9D MOSFET. Datasheet pdf. Equivalent
Type Designator: CS8N80FA9D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 47 nC
Rise Time (tr): 120 nS
Drain-Source Capacitance (Cd): 152 pF
Maximum Drain-Source On-State Resistance (Rds): 1.25 Ohm
Package: TO-220F
CS8N80FA9D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS8N80FA9D Datasheet (PDF)
1.1. cs8n80fa9d.pdf 
Size:350K _update_mosfet
Silicon N-Channel Power MOSFET R ○ CS8N80F A9D VDSS 800 V General Description： ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
3.1. cs8n80f a9d.pdf Size:350K _crhj
Silicon N-Channel Power MOSFET R ○ CS8N80F A9D VDSS 800 V General Description： ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
3.2. cs8n80f a9h.pdf Size:232K _crhj
Silicon N-Channel Power MOSFET R ○ CS8N80F A9H VDSS 800 V General Description： ID 8 A CS8N80F A9H, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
