CS90N20D Todos los transistores

 ..1. Size:103K  china
 cs90n20d.pdf

CS90N20D N PD TC=25 580 W VGS=10V,TC=70 66 ID A VGS=10V,TC=25 94 IDM 380 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.26 /W BVDSS VGS=0V,ID=0.25 mA 200 V RDS on VGS=10V,ID=50A 0.023 VGS th VDS=VGS,ID=0.

 9.1. Size:668K  jilin sino
 jcs90n10i.pdf

N R N-CHANNEL MOSFET JCS90N10I Package MAIN CHARACTERISTICS ID 90A VDSS 100V Rdson-typ - 7.0m (@Vgs=10V Qg-typ 98nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automoti

 9.2. Size:729K  crhj
 cs90n03 b4.pdf

Silicon N-Channel Power MOSFET R CS90N03 B4 General Description VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25 ) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 9.3. Size:726K  crhj
 cs90n03 b3.pdf

Silicon N-Channel Power MOSFET R CS90N03 B3 General Description VDSS 25 V CS90N03 B3, the silicon N-channel Enhanced ID 90 A PD(TC=25 ) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 9.4. Size:845K  wuxi china
 cs90n03b4.pdf

Silicon N-Channel Power MOSFET R CS90N03 B4 General Description VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25 ) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe