All MOSFET. CS90N20D Datasheet

 

CS90N20D MOSFET. Datasheet pdf. Equivalent

Type Designator: CS90N20D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 580 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 94 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm

Package: TO-247AC

CS90N20D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS90N20D Datasheet (PDF)

1.1. cs90n20d.pdf Size:103K _update_mosfet

CS90N20D

CS90N20D 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 580 W （VGS=10V,TC=70℃） 66 ID A （VGS=10V,TC=25℃） 94 极 限 IDM 380 A 值 VGS ±30 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.26 ℃/W 性 BVDSS VGS=0V,ID=0.25 mA 200 V RDS on） VGS=10V,ID=50A 0.023 Ω （ VGS th） VDS=VGS,ID=0.

5.1. cs90n03b4.pdf Size:845K _update_mosfet

CS90N20D CS90N20D

Silicon N-Channel Power MOSFET R ○ CS90N03 B4 General Description： VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25℃) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

5.2. cs90n03 b4.pdf Size:729K _crhj

CS90N20D CS90N20D

Silicon N-Channel Power MOSFET R ○ CS90N03 B4 General Description： VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25℃) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 5.3. cs90n03 b3.pdf Size:726K _crhj

CS90N20D CS90N20D

Silicon N-Channel Power MOSFET ○ R CS90N03 B3 General Description： VDSS 25 V CS90N03 B3, the silicon N-channel Enhanced ID 90 A PD(TC=25℃) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 mΩ Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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