CS90N20D Datasheet and Replacement
Type Designator: CS90N20D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 580 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 94 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-247AC
CS90N20D substitution
CS90N20D Datasheet (PDF)
cs90n20d.pdf

CS90N20D N PD TC=25 580 W VGS=10V,TC=70 66 ID A VGS=10V,TC=25 94 IDM 380 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.26 /W BVDSS VGS=0V,ID=0.25 mA 200 V RDS on VGS=10V,ID=50A 0.023 VGS th VDS=VGS,ID=0.
jcs90n10i.pdf

N RN-CHANNEL MOSFET JCS90N10I Package MAIN CHARACTERISTICS ID 90A VDSS 100V Rdson-typ - 7.0m (@Vgs=10V Qg-typ 98nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automoti
cs90n03 b4.pdf

Silicon N-Channel Power MOSFET R CS90N03 B4 General Description VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs90n03 b3.pdf

Silicon N-Channel Power MOSFET RCS90N03 B3 General Description VDSS 25 V CS90N03 B3, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
Datasheet: CS8N60F , CS8N60FA9H , CS8N65A0H , CS8N65A8H , CS8N65FA9H , CS8N80FA9D , CS8N90FA9HD , CS90N03B4 , 20N50 , CS910TH , CS9140 , CS9530 , CS9532 , CS9540 , CS9620 , CS9640 , CS9945BEY .
History: PHP6N60E
Keywords - CS90N20D MOSFET datasheet
CS90N20D cross reference
CS90N20D equivalent finder
CS90N20D lookup
CS90N20D substitution
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History: PHP6N60E



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