All MOSFET. CS90N20D Datasheet

 

CS90N20D MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS90N20D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 580 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 94 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-247AC

 CS90N20D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS90N20D Datasheet (PDF)

 ..1. Size:103K  china
 cs90n20d.pdf

CS90N20D

CS90N20D N PD TC=25 580 W VGS=10V,TC=70 66 ID A VGS=10V,TC=25 94 IDM 380 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.26 /W BVDSS VGS=0V,ID=0.25 mA 200 V RDS on VGS=10V,ID=50A 0.023 VGS th VDS=VGS,ID=0.

 9.1. Size:668K  jilin sino
 jcs90n10i.pdf

CS90N20D CS90N20D

N RN-CHANNEL MOSFET JCS90N10I Package MAIN CHARACTERISTICS ID 90A VDSS 100V Rdson-typ - 7.0m (@Vgs=10V Qg-typ 98nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automoti

 9.2. Size:729K  crhj
 cs90n03 b4.pdf

CS90N20D CS90N20D

Silicon N-Channel Power MOSFET R CS90N03 B4 General Description VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 9.3. Size:726K  crhj
 cs90n03 b3.pdf

CS90N20D CS90N20D

Silicon N-Channel Power MOSFET RCS90N03 B3 General Description VDSS 25 V CS90N03 B3, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 9.4. Size:845K  wuxi china
 cs90n03b4.pdf

CS90N20D CS90N20D

Silicon N-Channel Power MOSFET R CS90N03 B4 General Description VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top