CS9N90ANHD Todos los transistores

 

CS9N90ANHD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS9N90ANHD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
   Paquete / Cubierta: TO-3P
 

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CS9N90ANHD Datasheet (PDF)

 ..1. Size:785K  wuxi china
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CS9N90ANHD

Silicon N-Channel Power MOSFET R CS9N90 ANHD General Description VDSS 900 V CS9N90 ANHD, the silicon N-channel Enhanced ID 9 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.95 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.1. Size:1487K  jilin sino
jcs9n90ft jcs9n90wt jcs9n90abt jcs9n90bt.pdf pdf_icon

CS9N90ANHD

N RN-CHANNEL MOSFET JCS9N90T Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson-Max 1.35 Vgs=10V Qg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED

 8.1. Size:898K  jilin sino
jcs9n90ft.pdf pdf_icon

CS9N90ANHD

N RN-CHANNEL MOSFET JCS9N90FT Package MAIN CHARACTERISTICS ID 9 A VDSS 900 V Rdson 1.35 @Vgs=10VQg 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power

 8.2. Size:771K  crhj
cs9n90f a9d.pdf pdf_icon

CS9N90ANHD

Silicon N-Channel Power MOSFET R CS9N90F A9D General Description VDSS 900 V CS9N90F A9HD the silicon N-channel Enhanced ID 9 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Otros transistores... CS910TH , CS9140 , CS9530 , CS9532 , CS9540 , CS9620 , CS9640 , CS9945BEY , STP80NF70 , CS9N90FA9D , CSB4110 , CSB4710 , CSBF30 , CSE110 , CSE130 , CSE220 , CSE230 .

History: IRFS4610PBF | CS840A8H | WM05N03M | STB8NM60N | CS8N25A4H | CS840FA9H | STM8309

 

 
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