NDS9933A Todos los transistores

 

NDS9933A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDS9933A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: SO8
 

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NDS9933A Datasheet (PDF)

 ..1. Size:853K  cn vbsemi
nds9933a.pdf pdf_icon

NDS9933A

NDS9933Awww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vie

 8.1. Size:211K  fairchild semi
nds9936.pdf pdf_icon

NDS9933A

February 1996 NDS9936Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect5A, 30V. RDS(ON) = 0.05 @ VGS = 10V. transistors are produced using Fairchild's proprietary, high cellHigh density cell design for extremely low RDS(ON).density, DMOS technology. This very high density process isespeciall

 9.1. Size:258K  fairchild semi
nds9948.pdf pdf_icon

NDS9933A

January 2010NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide

 9.2. Size:209K  fairchild semi
nds9956a.pdf pdf_icon

NDS9933A

February 1996 NDS9956ADual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10Vtransistors are produced using Fairchild's proprietary, highHigh density cell design for extremely low RDS(ON).cell density, DMOS technology. This very high densityprocess is especia

Otros transistores... NDS8934 , NDS8936 , NDS8961 , NDS9400A , NDS9407 , NDS9410A , NDS9435A , NDS9925A , AON7403 , NDS9936 , NDS9945 , NDS9947 , NDS9948 , NDS9953A , NDS9955 , NDS9956A , NDS9957 .

History: FDPF44N25TRDTU | ASDM30P30CTD | IRF1704 | TMD3N90 | IRFR5410 | SFG10S08PF | ASDM40N52

 

 
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