CSD16321Q5 Todos los transistores

 

CSD16321Q5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD16321Q5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 1700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
   Paquete / Cubierta: SON5X6 SUPERSO8
 

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CSD16321Q5 Datasheet (PDF)

 ..1. Size:757K  texas
 csd16321q5.pdf pdf_icon

CSD16321Q5

CSD16321Q5www.ti.com SLPS220B AUGUST 2009 REVISED MAY 2010N-Channel NexFET Power MOSFETCheck for Samples: CSD16321Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultra Low Qg and QgdQg Gate Charge Total (4.5V) 14 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 2.5 nC Avalanche RatedVGS = 3V 2.8 m

 7.1. Size:802K  texas
 csd16325q5.pdf pdf_icon

CSD16321Q5

CSD16325Q5www.ti.com SLPS218C AUGUST 2009 REVISED APRIL 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16325Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 18 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 3.5 nC Avalanche RatedVGS = 3V 2.1

 7.2. Size:1195K  texas
 csd16327q3.pdf pdf_icon

CSD16321Q5

CSD16327Q3www.ti.com SLPS371 DECEMBER 2011N-Channel NexFET Power MOSFETCheck for Samples: CSD16327Q31FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultra Low Qg and QgdQg Gate Charge Total (4.5V) 6.2 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.1 nCVGS = 3V 5 m Avalanche RatedRDS(on) Drain to

 7.3. Size:763K  texas
 csd16322q5.pdf pdf_icon

CSD16321Q5

CSD16322Q5www.ti.com SLPS219B AUGUST 2009 REVISED MAY 2010N-Channel NexFET Power MOSFETCheck for Samples: CSD16322Q51FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 25 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 6.8 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 1.3 nC Avalanche RatedVGS = 3V 5.4 m

MOSTRAR MÁS

Otros transistores... CSD13202Q2 , CSD13302W , CSD13303W1015 , CSD13306W , CSD13381F4 , CSD13383F4 , CSD15571Q2 , CSD16301Q2 , IRF640N , CSD16322Q5 , CSD16323Q3 , CSD16325Q5 , CSD16327Q3 , CSD16340Q3 , CSD16342Q5A , CSD16401Q5 , CSD16403Q5A .

History: CS4N80P | CS10N80AND | SPD50N03S2L-06 | AOD468 | IPD30N03S2L-10 | SVF10N65CFJH | MSU12N60T

 

 
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