NDS9957 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDS9957  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Id|ⓘ - Corriente continua de drenaje: 2.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm

Encapsulados: SO8

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NDS9957 datasheet

 8.1. Size:209K  fairchild semi
 nds9956a.pdf pdf_icon

NDS9957

February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10V transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is especia

 8.2. Size:210K  fairchild semi
 nds9953a.pdf pdf_icon

NDS9957

February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -2.9A, -30V. RDS(ON) = 0.13 @ VGS = -10V. transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is espe

 8.3. Size:208K  fairchild semi
 nds9959.pdf pdf_icon

NDS9957

February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON). especially

 8.4. Size:234K  fairchild semi
 nds9952a.pdf pdf_icon

NDS9957

February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power N-Channel 3.7A, 30V, RDS(ON)=0.08 @ VGS=10V. field effect transistors are produced using Fairchild's P-Channel -2.9A, -30V, RDS(ON)=0.13 @ VGS=-10V. proprietary, high cell density, DMOS technology. This very high de

MOSTRAR MÁS

Otros transistores... NDS9933A, NDS9936, NDS9945, NDS9947, NDS9948, NDS9953A, NDS9955, NDS9956A, IRF830, NDS9959, NDT014, NDT014L, NDT2955, NDT3055, NDT3055L, NDT410EL, NDT451AN