NDS9957 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NDS9957 Datasheet (PDF)

8.1. Size:209K fairchild semi
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February 1996 NDS9956ADual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10Vtransistors are produced using Fairchild's proprietary, highHigh density cell design for extremely low RDS(ON).cell density, DMOS technology. This very high densityprocess is especia

8.2. Size:210K fairchild semi
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February 1996 NDS9953ADual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.9A, -30V. RDS(ON) = 0.13 @ VGS = -10V.transistors are produced using Fairchild's proprietary, highHigh density cell design for extremely low RDS(ON).cell density, DMOS technology. This very high densityprocess is espe

8.3. Size:208K fairchild semi
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February 1996 NDS9959Dual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode power field effect2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10Vtransistors are produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON).especially

8.4. Size:234K fairchild semi
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February 1996 NDS9952ADual N & P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese dual N- and P-channel enhancement mode powerN-Channel 3.7A, 30V, RDS(ON)=0.08 @ VGS=10V. field effect transistors are produced using Fairchild'sP-Channel -2.9A, -30V, RDS(ON)=0.13 @ VGS=-10V. proprietary, high cell density, DMOS technology. Thisvery high de

Otros transistores... NDS9933A , NDS9936 , NDS9945 , NDS9947 , NDS9948 , NDS9953A , NDS9955 , NDS9956A , 5N50 , NDS9959 , NDT014 , NDT014L , NDT2955 , NDT3055 , NDT3055L , NDT410EL , NDT451AN .