NDS9957 Datasheet. Specs and Replacement

Type Designator: NDS9957  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SO8

  📄📄 Copy 

NDS9957 substitution

- MOSFET ⓘ Cross-Reference Search

 

NDS9957 datasheet

 8.1. Size:209K  fairchild semi
 nds9956a.pdf pdf_icon

NDS9957

February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10V transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is especia... See More ⇒

 8.2. Size:210K  fairchild semi
 nds9953a.pdf pdf_icon

NDS9957

February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -2.9A, -30V. RDS(ON) = 0.13 @ VGS = -10V. transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is espe... See More ⇒

 8.3. Size:208K  fairchild semi
 nds9959.pdf pdf_icon

NDS9957

February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON). especially... See More ⇒

 8.4. Size:234K  fairchild semi
 nds9952a.pdf pdf_icon

NDS9957

February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power N-Channel 3.7A, 30V, RDS(ON)=0.08 @ VGS=10V. field effect transistors are produced using Fairchild's P-Channel -2.9A, -30V, RDS(ON)=0.13 @ VGS=-10V. proprietary, high cell density, DMOS technology. This very high de... See More ⇒

SHOW MORE

Detailed specifications: NDS9933A, NDS9936, NDS9945, NDS9947, NDS9948, NDS9953A, NDS9955, NDS9956A, IRF830, NDS9959, NDT014, NDT014L, NDT2955, NDT3055, NDT3055L, NDT410EL, NDT451AN

Keywords - NDS9957 MOSFET specs

 NDS9957 cross reference

 NDS9957 equivalent finder

 NDS9957 pdf lookup

 NDS9957 substitution

 NDS9957 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.