CSD17327Q5A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD17327Q5A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua
de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 8.2 nS
Cossⓘ - Capacitancia de salida: 286 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0122 Ohm
Encapsulados: SON5X6
SO-8
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CSD17327Q5A datasheet
..1. Size:826K texas
csd17327q5a.pdf 
CSD17327Q5A www.ti.com SLPS332 JUNE 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17327Q5A PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 2.8 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 0.8 nC Avalanche Rated VGS = 4.5V 12.5 m RDS(on) Drain to Source On Resistance
7.1. Size:825K texas
csd17322q5a.pdf
CSD17322Q5A www.ti.com SLPS330 JUNE 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17322Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 3.6 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC Avalanche Rated VGS = 4.5V 10 m RDS(on) Dra
8.1. Size:1122K texas
csd17381f4.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17381F4 SLPS411D APRIL 2013 REVISED OCTOBER 2014 CSD17381F4 30 V N-Channel FemtoFET MOSFET 1 Features Product Summary 1 Ultra-Low On-Resistance TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V Low Threshold Voltage Qg Gate Charge Total (4
8.2. Size:883K texas
csd17302q5a.pdf
CSD17302Q5A www.ti.com SLPS216A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17302Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 5.4 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.2 nC Avalanche Rated VGS
8.3. Size:883K texas
csd17310q5a.pdf
CSD17310Q5A www.ti.com SLPS255A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17310Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 8.9 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 2.1 nC Avalanche Rated VGS
8.4. Size:947K texas
csd17313q2q1.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17313Q2Q1 SLPS427D OCTOBER 2012 REVISED SEPTEMBER 2015 CSD17313Q2Q1 30-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Qualified for Automotive Applications TA = 25 C TYPICAL VALUE UNIT Optimized for 5-V Gate Drive VDS Drain-to-Source Voltage 30 V Ultra-Low Q
8.5. Size:896K texas
csd17311q5.pdf
CSD17311Q5 www.ti.com SLPS257A MARCH 2010 REVISED SEPTEMBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples CSD17311Q5 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 24 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 5.2 nC Low Thermal Resistance VGS = 3V 2.3 m Avala
8.6. Size:314K texas
csd17313q2.pdf
CSD17313Q2 www.ti.com SLPS260B MARCH 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFET PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 2.1 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 0.4 nC Low Thermal Resistance VGS = 3V 31 m Pb Free RDS(on) Drain to Source On Resi
8.7. Size:884K texas
csd17305q5a.pdf
CSD17305Q5A www.ti.com SLPS254A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17305Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 14.1 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 3 nC Avalanche Rated VGS =
8.8. Size:517K texas
csd17308q3.pdf
CSD17308Q3 www.ti.com SLPS262A FEBRUARY 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17308Q3 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 3.9 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 0.8 nC Low Thermal Resistance VGS = 3V 12.5 m
8.9. Size:940K texas
csd17309q3.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17309Q3 SLPS261B MARCH 2010 REVISED SEPTEMBER 2014 CSD17309Q3 30-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Optimized for 5 V Gate Drive TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Cha
8.10. Size:895K texas
csd17304q3.pdf
CSD17304Q3 www.ti.com SLPS258A FEBRUARY 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17304Q3 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 5.1 nC Ultralow Qg and Qgd Qgd Gate Charge Gate to Drain 1.1 nC Low Thermal Resistance VGS = 3V 9.8 m Av
8.11. Size:881K texas
csd17307q5a.pdf
CSD17307Q5A www.ti.com SLPS252A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17307Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 4 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1 nC Avalanche Rated VGS = 3V
8.12. Size:894K texas
csd17303q5.pdf
CSD17303Q5 www.ti.com SLPS246B JANUARY 2010 REVISED SEPTEMBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples CSD17303Q5 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 18 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 4 nC Avalanche Rated VGS = 3V
8.13. Size:885K texas
csd17301q5a.pdf
CSD17301Q5A www.ti.com SLPS215C JANUARY 2010 REVISED SEPTEMBER 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17301Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 19 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 4.3 nC Avalanche Rated VG
8.14. Size:895K texas
csd17312q5.pdf
CSD17312Q5 www.ti.com SLPS256A MARCH 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples CSD17312Q5 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 28 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 6 nC Low Thermal Resistance VGS = 3V 1.8 m Avalanch
8.15. Size:883K texas
csd17306q5a.pdf
CSD17306Q5A www.ti.com SLPS253A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17306Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 11.8 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 2.4 nC Avalanche Rated VGS
8.16. Size:1796K cn vbsemi
csd17301q5.pdf
CSD17301Q5 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0018 at VGS = 10 V 100 APPLICATIONS 30 82 nC 0.0025 at VGS = 4.5 V 90 OR-ing Server D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ABSOLUTE M
Otros transistores... CSD17308Q3, CSD17309Q3, CSD17310Q5A, CSD17311Q5, CSD17312Q5, CSD17313Q2, CSD17313Q2Q1, CSD17322Q5A, IRF530, CSD17381F4, CSD17483F4, CSD17484F4, CSD17501Q5A, CSD17505Q5A, CSD17506Q5A, CSD17507Q5A, CSD17510Q5A
