CSD17327Q5A - описание и поиск аналогов

 ..1. Size:826K  texas
 csd17327q5a.pdf 

CSD17327Q5A www.ti.com SLPS332 JUNE 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17327Q5A PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 2.8 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 0.8 nC Avalanche Rated VGS = 4.5V 12.5 m RDS(on) Drain to Source On Resistance

 7.1. Size:825K  texas
 csd17322q5a.pdf 

CSD17322Q5A www.ti.com SLPS330 JUNE 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17322Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 3.6 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC Avalanche Rated VGS = 4.5V 10 m RDS(on) Dra

 8.1. Size:1122K  texas
 csd17381f4.pdf 

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17381F4 SLPS411D APRIL 2013 REVISED OCTOBER 2014 CSD17381F4 30 V N-Channel FemtoFET MOSFET 1 Features Product Summary 1 Ultra-Low On-Resistance TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V Low Threshold Voltage Qg Gate Charge Total (4

 8.2. Size:883K  texas
 csd17302q5a.pdf 

CSD17302Q5A www.ti.com SLPS216A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17302Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 5.4 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.2 nC Avalanche Rated VGS

 8.3. Size:883K  texas
 csd17310q5a.pdf 

CSD17310Q5A www.ti.com SLPS255A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17310Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 8.9 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 2.1 nC Avalanche Rated VGS

 8.4. Size:947K  texas
 csd17313q2q1.pdf 

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17313Q2Q1 SLPS427D OCTOBER 2012 REVISED SEPTEMBER 2015 CSD17313Q2Q1 30-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Qualified for Automotive Applications TA = 25 C TYPICAL VALUE UNIT Optimized for 5-V Gate Drive VDS Drain-to-Source Voltage 30 V Ultra-Low Q

 8.5. Size:896K  texas
 csd17311q5.pdf 

CSD17311Q5 www.ti.com SLPS257A MARCH 2010 REVISED SEPTEMBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples CSD17311Q5 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 24 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 5.2 nC Low Thermal Resistance VGS = 3V 2.3 m Avala

 8.6. Size:314K  texas
 csd17313q2.pdf 

CSD17313Q2 www.ti.com SLPS260B MARCH 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFET PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 2.1 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 0.4 nC Low Thermal Resistance VGS = 3V 31 m Pb Free RDS(on) Drain to Source On Resi

 8.7. Size:884K  texas
 csd17305q5a.pdf 

CSD17305Q5A www.ti.com SLPS254A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17305Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 14.1 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 3 nC Avalanche Rated VGS =

 8.8. Size:517K  texas
 csd17308q3.pdf 

CSD17308Q3 www.ti.com SLPS262A FEBRUARY 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17308Q3 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 3.9 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 0.8 nC Low Thermal Resistance VGS = 3V 12.5 m

 8.9. Size:940K  texas
 csd17309q3.pdf 

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17309Q3 SLPS261B MARCH 2010 REVISED SEPTEMBER 2014 CSD17309Q3 30-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Optimized for 5 V Gate Drive TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Cha

 8.10. Size:895K  texas
 csd17304q3.pdf 

CSD17304Q3 www.ti.com SLPS258A FEBRUARY 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17304Q3 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 5.1 nC Ultralow Qg and Qgd Qgd Gate Charge Gate to Drain 1.1 nC Low Thermal Resistance VGS = 3V 9.8 m Av

 8.11. Size:881K  texas
 csd17307q5a.pdf 

CSD17307Q5A www.ti.com SLPS252A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17307Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 4 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1 nC Avalanche Rated VGS = 3V

 8.12. Size:894K  texas
 csd17303q5.pdf 

CSD17303Q5 www.ti.com SLPS246B JANUARY 2010 REVISED SEPTEMBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples CSD17303Q5 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 18 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 4 nC Avalanche Rated VGS = 3V

 8.13. Size:885K  texas
 csd17301q5a.pdf 

CSD17301Q5A www.ti.com SLPS215C JANUARY 2010 REVISED SEPTEMBER 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17301Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 19 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 4.3 nC Avalanche Rated VG

 8.14. Size:895K  texas
 csd17312q5.pdf 

CSD17312Q5 www.ti.com SLPS256A MARCH 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples CSD17312Q5 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 28 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 6 nC Low Thermal Resistance VGS = 3V 1.8 m Avalanch

 8.15. Size:883K  texas
 csd17306q5a.pdf 

CSD17306Q5A www.ti.com SLPS253A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17306Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 11.8 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 2.4 nC Avalanche Rated VGS

 8.16. Size:1796K  cn vbsemi
 csd17301q5.pdf 

CSD17301Q5 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0018 at VGS = 10 V 100 APPLICATIONS 30 82 nC 0.0025 at VGS = 4.5 V 90 OR-ing Server D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ABSOLUTE M