CSD17501Q5A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD17501Q5A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.8 VQgⓘ - Carga de la puerta: 13.2 nC
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 1350 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
Paquete / Cubierta: SON5X6
Búsqueda de reemplazo de MOSFET CSD17501Q5A
CSD17501Q5A Datasheet (PDF)
csd17501q5a.pdf
CSD17501Q5Awww.ti.com SLPS303B DECEMBER 2010 REVISED SEPTEMBER 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17501Q5APRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 13.2 nC Avalanche RatedQgd Gate Charge
csd17505q5a.pdf
CSD17505Q5Awww.ti.com SLPS301A DECEMBER 2010REVISED JULY 201130V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17505Q5APRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 10 nC Avalanche RatedQgd Gate Charge Gate to
csd17507q5a.pdf
CSD17507Q5Awww.ti.com SLPS243E JULY 2010REVISED JULY 201130V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17507Q5APRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Ultralow Qg and QgdQg Gate Charge Total (4.5V) 2.8 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 0.7 nC Avalanche RatedVGS = 4.5V 11.8 mRDS(on) Drain to Sour
csd17506q5a.pdf
CSD17506Q5Awww.ti.com SLPS304B DECEMBER 2010 REVISED JUNE 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17506Q5APRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 8.3 nC Avalanche RatedQgd Gate Charge Gat
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918