CSD17505Q5A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD17505Q5A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.2 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 24 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.8 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 11.5 nS
Conductancia de drenaje-sustrato (Cd): 1030 pF
Resistencia entre drenaje y fuente RDS(on): 0.0035 Ohm
Paquete / Cubierta: SON5X6
Búsqueda de reemplazo de MOSFET CSD17505Q5A
CSD17505Q5A Datasheet (PDF)
csd17505q5a.pdf
CSD17505Q5Awww.ti.com SLPS301A DECEMBER 2010REVISED JULY 201130V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17505Q5APRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 10 nC Avalanche RatedQgd Gate Charge Gate to
csd17501q5a.pdf
CSD17501Q5Awww.ti.com SLPS303B DECEMBER 2010 REVISED SEPTEMBER 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17501Q5APRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 13.2 nC Avalanche RatedQgd Gate Charge
csd17507q5a.pdf
CSD17507Q5Awww.ti.com SLPS243E JULY 2010REVISED JULY 201130V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17507Q5APRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Ultralow Qg and QgdQg Gate Charge Total (4.5V) 2.8 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 0.7 nC Avalanche RatedVGS = 4.5V 11.8 mRDS(on) Drain to Sour
csd17506q5a.pdf
CSD17506Q5Awww.ti.com SLPS304B DECEMBER 2010 REVISED JUNE 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17506Q5APRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 8.3 nC Avalanche RatedQgd Gate Charge Gat
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
