CSD17505Q5A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD17505Q5A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11.5 nS

Cossⓘ - Capacitancia de salida: 1030 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm

Encapsulados: SON5X6

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CSD17505Q5A datasheet

 ..1. Size:504K  texas
 csd17505q5a.pdf pdf_icon

CSD17505Q5A

CSD17505Q5A www.ti.com SLPS301A DECEMBER 2010 REVISED JULY 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17505Q5A PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 10 nC Avalanche Rated Qgd Gate Charge Gate to

 7.1. Size:487K  texas
 csd17501q5a.pdf pdf_icon

CSD17505Q5A

CSD17501Q5A www.ti.com SLPS303B DECEMBER 2010 REVISED SEPTEMBER 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17501Q5A PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 13.2 nC Avalanche Rated Qgd Gate Charge

 7.2. Size:884K  texas
 csd17507q5a.pdf pdf_icon

CSD17505Q5A

CSD17507Q5A www.ti.com SLPS243E JULY 2010 REVISED JULY 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17507Q5A PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 2.8 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 0.7 nC Avalanche Rated VGS = 4.5V 11.8 m RDS(on) Drain to Sour

 7.3. Size:528K  texas
 csd17506q5a.pdf pdf_icon

CSD17505Q5A

CSD17506Q5A www.ti.com SLPS304B DECEMBER 2010 REVISED JUNE 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17506Q5A PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 8.3 nC Avalanche Rated Qgd Gate Charge Gat

MOSTRAR MÁS

Otros transistores... CSD17313Q2, CSD17313Q2Q1, CSD17322Q5A, CSD17327Q5A, CSD17381F4, CSD17483F4, CSD17484F4, CSD17501Q5A, IRFP450, CSD17506Q5A, CSD17507Q5A, CSD17510Q5A, CSD17522Q5A, CSD17527Q5A, CSD17551Q3A, CSD17551Q5A, CSD17552Q3A