CSD17506Q5A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD17506Q5A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 860 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: SON5X6

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CSD17506Q5A datasheet

 ..1. Size:528K  texas
 csd17506q5a.pdf pdf_icon

CSD17506Q5A

CSD17506Q5A www.ti.com SLPS304B DECEMBER 2010 REVISED JUNE 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17506Q5A PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 8.3 nC Avalanche Rated Qgd Gate Charge Gat

 7.1. Size:487K  texas
 csd17501q5a.pdf pdf_icon

CSD17506Q5A

CSD17501Q5A www.ti.com SLPS303B DECEMBER 2010 REVISED SEPTEMBER 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17501Q5A PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 13.2 nC Avalanche Rated Qgd Gate Charge

 7.2. Size:504K  texas
 csd17505q5a.pdf pdf_icon

CSD17506Q5A

CSD17505Q5A www.ti.com SLPS301A DECEMBER 2010 REVISED JULY 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17505Q5A PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 10 nC Avalanche Rated Qgd Gate Charge Gate to

 7.3. Size:884K  texas
 csd17507q5a.pdf pdf_icon

CSD17506Q5A

CSD17507Q5A www.ti.com SLPS243E JULY 2010 REVISED JULY 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17507Q5A PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 2.8 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 0.7 nC Avalanche Rated VGS = 4.5V 11.8 m RDS(on) Drain to Sour

MOSTRAR MÁS

Otros transistores... CSD17313Q2Q1, CSD17322Q5A, CSD17327Q5A, CSD17381F4, CSD17483F4, CSD17484F4, CSD17501Q5A, CSD17505Q5A, TK10A60D, CSD17507Q5A, CSD17510Q5A, CSD17522Q5A, CSD17527Q5A, CSD17551Q3A, CSD17551Q5A, CSD17552Q3A, CSD17552Q5A