CSD17510Q5A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD17510Q5A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 630 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm

Encapsulados: SON5X6 SUPERSO8

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CSD17510Q5A datasheet

 ..1. Size:863K  texas
csd17510q5a.pdf pdf_icon

CSD17510Q5A

CSD17510Q5A www.ti.com SLPS271G JULY 2010 REVISED SEPTEMBER 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17510Q5A PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 6.4 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.9 nC Avalanche Rated VGS = 4.5V 5.4 m RDS(on) Drain t

 8.1. Size:843K  texas
csd17522q5a.pdf pdf_icon

CSD17510Q5A

CSD17522Q5A www.ti.com SLPS341A JUNE 2011 REVISED AUGUST 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17522Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 3.6 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC VGS = 4.5V 10 m Avala

 8.2. Size:1379K  texas
csd17556q5b.pdf pdf_icon

CSD17510Q5A

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17556Q5B SLPS392B MARCH 2013 REVISED OCTOBER 2014 CSD17556Q5B 30 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Extremely Low Resistance TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Charge

 8.3. Size:1198K  texas
csd17579q3a.pdf pdf_icon

CSD17510Q5A

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17579Q3A SLPS527 SEPTEMBER 2014 CSD17579Q3A 30 V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low RDS(on) VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5 V) 5.3 nC Avalanche Rat

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