CSD17522Q5A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD17522Q5A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 390 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0081 Ohm
Encapsulados: SON5X6
SO-8
Búsqueda de reemplazo de CSD17522Q5A MOSFET
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CSD17522Q5A datasheet
..1. Size:843K texas
csd17522q5a.pdf 
CSD17522Q5A www.ti.com SLPS341A JUNE 2011 REVISED AUGUST 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17522Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 3.6 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.1 nC VGS = 4.5V 10 m Avala
7.1. Size:896K texas
csd17527q5a.pdf
CSD17527Q5A www.ti.com SLPS331A JUNE 2011 REVISED AUGUST 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17527Q5A PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 2.8 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 0.8 nC Avalanche Rated VGS = 4.5V 12.5 m RDS(on) Drain to So
8.1. Size:863K texas
csd17510q5a.pdf
CSD17510Q5A www.ti.com SLPS271G JULY 2010 REVISED SEPTEMBER 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17510Q5A PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 6.4 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.9 nC Avalanche Rated VGS = 4.5V 5.4 m RDS(on) Drain t
8.2. Size:1379K texas
csd17556q5b.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17556Q5B SLPS392B MARCH 2013 REVISED OCTOBER 2014 CSD17556Q5B 30 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Extremely Low Resistance TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Charge
8.3. Size:1198K texas
csd17579q3a.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17579Q3A SLPS527 SEPTEMBER 2014 CSD17579Q3A 30 V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low RDS(on) VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5 V) 5.3 nC Avalanche Rat
8.4. Size:487K texas
csd17501q5a.pdf
CSD17501Q5A www.ti.com SLPS303B DECEMBER 2010 REVISED SEPTEMBER 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17501Q5A PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 13.2 nC Avalanche Rated Qgd Gate Charge
8.5. Size:1000K texas
csd17573q5b.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17573Q5B SLPS492A JUNE 2014 REVISED FEBRUARY 2015 CSD17573Q5B 30 V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Ultra-Low RDS(on) VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5 V
8.6. Size:504K texas
csd17505q5a.pdf
CSD17505Q5A www.ti.com SLPS301A DECEMBER 2010 REVISED JULY 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17505Q5A PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 10 nC Avalanche Rated Qgd Gate Charge Gate to
8.7. Size:941K texas
csd17585f5.pdf
Support & Product Order Technical Tools & Community Folder Now Documents Software CSD17585F5 SLPS610A OCTOBER 2016 REVISED JANUARY 2017 CSD17585F5 30-V N-Channel FemtoFET MOSFET . 1 Features 1 Low-On Resistance Product Summary Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Ultra-Small Footprint VDS Drain-to-Source Voltage 30 V Qg Gate Charge Total (4.5
8.8. Size:1256K texas
csd17551q5a.pdf
CSD17551Q5A www.ti.com SLPS375 MAY 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17551Q5A 1 FEATURES PRODUCT SUMMARY Ultra Low Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 6.0 nC Avalanche Rated Qgd Gate Charge Gate to Drain 1.4 nC VGS = 4.5V 9 m Pb Free Terminal Plating RDS(on) Drain to S
8.10. Size:332K texas
csd17581q5a.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17581Q5A SLPS630 SEPTEMBER 2016 CSD17581Q5A 30-V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low RDS(on) VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5 V) 20 nC Avalanche Rate
8.11. Size:1464K texas
csd17571q2.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17571Q2 SLPS393A OCTOBER 2013 REVISED JANUARY 2015 CSD17571Q2 30V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 30 V Avalanche Rated Qg Gate Charge Total (4.5 V)
8.12. Size:884K texas
csd17507q5a.pdf
CSD17507Q5A www.ti.com SLPS243E JULY 2010 REVISED JULY 2011 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17507Q5A PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 2.8 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 0.7 nC Avalanche Rated VGS = 4.5V 11.8 m RDS(on) Drain to Sour
8.13. Size:1183K texas
csd17570q5b.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17570Q5B SLPS471C FEBRUARY 2014 REVISED FEBRUARY 2015 CSD17570Q5B 30 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Resistance TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 30 V Avalanche Rated Qg Gate Charge Tot
8.14. Size:1257K texas
csd17555q5a.pdf
CSD17555Q5A www.ti.com SLPS353 JUNE 2012 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17555Q5A PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 23 nC Avalanche Rated Qgd Gate Charge Gate to Drain 5 nC Pb Free T
8.15. Size:911K texas
csd17577q5a.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17577Q5A SLPS516 AUGUST 2014 CSD17577Q5A 30-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 30 V Avalanche Rated Qg Gate Charge Total (4.5 V) 13 nC Pb Free Termi
8.16. Size:1261K texas
csd17553q5a.pdf
CSD17553Q5A www.ti.com SLPS373 MAY 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17553Q5A 1 FEATURES PRODUCT SUMMARY Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 17.5 nC Avalanche Rated Qgd Gate Charge Gate to Drain 4.7 nC VGS = 4.5V 3.5 m Pb Free Terminal Plating RDS(on) Drain to
8.17. Size:887K texas
csd17577q3a.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17577Q3A SLPS515 AUGUST 2014 CSD17577Q3A 30-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 30 V Avalanche Rated Qg Gate Charge Total (4.5 V) 12 nC Pb Free Qgd G
8.18. Size:891K texas
csd17578q5a.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17578Q5A SLPS526 MARCH 2015 CSD17578Q5A 30 V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low RDS(on) VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5 V) 7.9 nC Avalanche Rated
8.19. Size:739K texas
csd17552q5a.pdf
CSD17552Q5A www.ti.com SLPS428 NOVEMBER 2012 30-V, N-Channel NexFET Power MOSFETs Check for Samples CSD17552Q5A 1 FEATURES PRODUCT SUMMARY Ultra Low Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 9.0 nC Avalanche Rated Qgd Gate Charge Gate to Drain 2.0 nC VGS = 4.5V 6.1 m Pb Free Terminal Plating RDS(on) Dr
8.20. Size:887K texas
csd17579q5a.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17579Q5A SLPS524 MARCH 2015 CSD17579Q5A 30 V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low RDS(on) VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5 V) 5.4 nC Avalanche Rated
8.21. Size:983K texas
csd17576q5b.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17576Q5B SLPS497 JUNE 2014 CSD17576Q5B 30 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low RDS(on) VDS Drain -to-Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 25 nC Avalanche Rated Qgd
8.22. Size:980K texas
csd17578q3a.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17578Q3A SLPS525 SEPTEMBER 2014 CSD17578Q3A 30 V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low RDS(on) VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5 V) 7.9 nC Avalanche Rat
8.23. Size:528K texas
csd17506q5a.pdf
CSD17506Q5A www.ti.com SLPS304B DECEMBER 2010 REVISED JUNE 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17506Q5A PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 8.3 nC Avalanche Rated Qgd Gate Charge Gat
8.24. Size:824K texas
csd17559q5.pdf
CSD17559Q5 www.ti.com SLPS374 NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17559Q5 PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Extremely Low Resistance VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 39 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 9.3 nC
8.25. Size:1278K texas
csd17552q3a.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17552Q3A SLPS387A SEPTEMBER 2012 REVISED JUNE 2014 CSD17552Q3A 30V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 30 V Avalanche Rated Qg Gate Charge Total
8.26. Size:1278K texas
csd17551q3a.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17551Q3A SLPS386A SEPTEMBER 2012 REVISED JUNE 2014 CSD17551Q3A 30-V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 30 V Avalanche Rated Qg Gate Charge Total
Otros transistores... CSD17381F4, CSD17483F4, CSD17484F4, CSD17501Q5A, CSD17505Q5A, CSD17506Q5A, CSD17507Q5A, CSD17510Q5A, 4N60, CSD17527Q5A, CSD17551Q3A, CSD17551Q5A, CSD17552Q3A, CSD17552Q5A, CSD17553Q5A, CSD17555Q5A, CSD17556Q5B
