CSD17551Q3A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD17551Q3A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.6 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 244 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: SON3.3X3.3
Búsqueda de reemplazo de CSD17551Q3A MOSFET
- Selecciónⓘ de transistores por parámetros
CSD17551Q3A datasheet
csd17551q3a.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17551Q3A SLPS386A SEPTEMBER 2012 REVISED JUNE 2014 CSD17551Q3A 30-V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 30 V Avalanche Rated Qg Gate Charge Total
csd17551q5a.pdf
CSD17551Q5A www.ti.com SLPS375 MAY 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17551Q5A 1 FEATURES PRODUCT SUMMARY Ultra Low Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 6.0 nC Avalanche Rated Qgd Gate Charge Gate to Drain 1.4 nC VGS = 4.5V 9 m Pb Free Terminal Plating RDS(on) Drain to S
csd17556q5b.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17556Q5B SLPS392B MARCH 2013 REVISED OCTOBER 2014 CSD17556Q5B 30 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Extremely Low Resistance TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Charge
csd17555q5a.pdf
CSD17555Q5A www.ti.com SLPS353 JUNE 2012 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17555Q5A PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 23 nC Avalanche Rated Qgd Gate Charge Gate to Drain 5 nC Pb Free T
Otros transistores... CSD17484F4, CSD17501Q5A, CSD17505Q5A, CSD17506Q5A, CSD17507Q5A, CSD17510Q5A, CSD17522Q5A, CSD17527Q5A, IRF1407, CSD17551Q5A, CSD17552Q3A, CSD17552Q5A, CSD17553Q5A, CSD17555Q5A, CSD17556Q5B, CSD17559Q5, CSD17570Q5B
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
irfp450 equivalent | 2sb649 | 2sb324 transistor | b754 transistor | 2sc828 equivalent | 4843ns | 2sc1318 datasheet | 2sc3281 datasheet
