CSD17551Q3A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD17551Q3A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 244 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: SON3.3X3.3

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CSD17551Q3A datasheet

 ..1. Size:1278K  texas
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CSD17551Q3A

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17551Q3A SLPS386A SEPTEMBER 2012 REVISED JUNE 2014 CSD17551Q3A 30-V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 30 V Avalanche Rated Qg Gate Charge Total

 5.1. Size:1256K  texas
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CSD17551Q3A

CSD17551Q5A www.ti.com SLPS375 MAY 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17551Q5A 1 FEATURES PRODUCT SUMMARY Ultra Low Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 6.0 nC Avalanche Rated Qgd Gate Charge Gate to Drain 1.4 nC VGS = 4.5V 9 m Pb Free Terminal Plating RDS(on) Drain to S

 7.1. Size:1379K  texas
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CSD17551Q3A

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17556Q5B SLPS392B MARCH 2013 REVISED OCTOBER 2014 CSD17556Q5B 30 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Extremely Low Resistance TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Charge

 7.2. Size:1257K  texas
csd17555q5a.pdf pdf_icon

CSD17551Q3A

CSD17555Q5A www.ti.com SLPS353 JUNE 2012 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17555Q5A PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 23 nC Avalanche Rated Qgd Gate Charge Gate to Drain 5 nC Pb Free T

Otros transistores... CSD17484F4, CSD17501Q5A, CSD17505Q5A, CSD17506Q5A, CSD17507Q5A, CSD17510Q5A, CSD17522Q5A, CSD17527Q5A, IRF1407, CSD17551Q5A, CSD17552Q3A, CSD17552Q5A, CSD17553Q5A, CSD17555Q5A, CSD17556Q5B, CSD17559Q5, CSD17570Q5B