CSD17551Q3A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CSD17551Q3A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 6 nC
trⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 244 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: SON3.3X3.3
Аналог (замена) для CSD17551Q3A
CSD17551Q3A Datasheet (PDF)
csd17551q3a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17551Q3ASLPS386A SEPTEMBER 2012 REVISED JUNE 2014CSD17551Q3A 30-V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total
csd17551q5a.pdf
CSD17551Q5Awww.ti.com SLPS375 MAY 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17551Q5A1FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 6.0 nC Avalanche RatedQgd Gate Charge Gate to Drain 1.4 nCVGS = 4.5V 9 m Pb Free Terminal PlatingRDS(on) Drain to S
csd17556q5b.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17556Q5BSLPS392B MARCH 2013REVISED OCTOBER 2014CSD17556Q5B 30 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Extremely Low ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge
csd17555q5a.pdf
CSD17555Q5Awww.ti.com SLPS353 JUNE 201230V N-Channel NexFET Power MOSFETsCheck for Samples: CSD17555Q5APRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 23 nC Avalanche RatedQgd Gate Charge Gate to Drain 5 nC Pb Free T
csd17553q5a.pdf
CSD17553Q5Awww.ti.com SLPS373 MAY 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17553Q5A1FEATURESPRODUCT SUMMARY Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 17.5 nC Avalanche RatedQgd Gate Charge Gate to Drain 4.7 nCVGS = 4.5V 3.5 m Pb Free Terminal PlatingRDS(on) Drain to
csd17552q5a.pdf
CSD17552Q5Awww.ti.com SLPS428 NOVEMBER 201230-V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17552Q5A1FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 9.0 nC Avalanche RatedQgd Gate Charge Gate to Drain 2.0 nCVGS = 4.5V 6.1 m Pb Free Terminal PlatingRDS(on) Dr
csd17559q5.pdf
CSD17559Q5www.ti.com SLPS374 NOVEMBER 201230V N-Channel NexFET Power MOSFETsCheck for Samples: CSD17559Q5PRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Extremely Low ResistanceVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 39 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 9.3 nC
csd17552q3a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17552Q3ASLPS387A SEPTEMBER 2012 REVISED JUNE 2014CSD17552Q3A 30V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918